PT4430
30V/18A N-Channel Advanced Power MOSFET
1
JinYu
www. htsemi. com V:2.0
Semiconductor
2022/12
Features
• High density cell design for ultra low Rdson
•
Fully characterized Avalanche voltage and current
Applications
•
Power switching application
•
Hard switched and high frequency circuits
• Uninterruptible Power Supply（UPS）
Order Information
Product
Package
Marking
Reel Size
Reel
Carton
PT4430
SOP-8
PT4430
13inch
3000PCS
48000PCS
Absolute Maximum Ratings
Symbol
Parameter
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
GS
Gate-Source Voltage
V
TJ
Maximum Junction Temperature
°C
TSTG
Storage Temperature Range
°C
IS
Diode Continuous Forward Current
TA
=25°C
A
Mounted on Large Heat Sink
IDM
Pulse Drain Current Tested (Sillicon Limit) (Note1)
TA
=25°C
A
ID
Continuous Drain current
TA
=25°C
A
PD
Maximum Power Dissipation
TA
=25°C
W
RθJA
Thermal Resistance Junction−to−Ambient (Note2)
°C/W
BVDSS
30
V
ID
18
A
RDSON@VGS=10V
4.2
mΩ
RDSON@VGS=4.5V
5.8
mΩ
SOP-8
PT4430
30V/18A N-Channel Advanced Power MOSFET
2
JinYu
www. htsemi. com V:2.0
Semiconductor
2022/12
Note:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%.
4. Guranteed by design, not subject to production testing.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V
(BR)DSS
Drain- Source Breakdown Voltage
VGS=0V ID=250μA
30
--
--
V
I
DSS
Zero Gate Voltage Drain current
VDS=30V,VGS=0V
--
--
1
μA
I
GSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
V
GS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA
1
--
2.5
V
R
DS(ON)
Drain-Source On-State Resistance (Note3)
VGS=10V, ID=18A
--
4.2
5.5
mΩ
VGS=4.5V, ID=15A
--
5.8
8
mΩ
g
FS
Forward Transconductance
VDS=5V,ID=18A
--
80
--
S
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) (Note4)
C
iss
Input Capacitance
VDS=15V,
VGS=0V,
F=1MHz
--
2330
--
pF
C
oss
Output Capacitance
--
460
--
pF
C
rss
Reverse Transfer Capacitance
--
230
--
pF
Q
g
Total Gate Charge
VDS=10V,
ID=8A,
VGS=10V
--
41
--
nC
Q
gs
Gate-Source Charge
--
14
--
nC
Q
gd
Gate-Drain Charge
--
11
--
nC
Switching Characteristics (Note4)
t
d(on)
Turn-on Delay Time
VDS=10V,
ID=18A,
RG=2.7Ω,
VGS=10V
--
20
--
nS
t
r
Turn-on Rise Time
--
15
--
nS
t
d(off)
Turn-off Delay Time
--
60
--
nS
t
f
Turn-off Fall Time
--
10
--
nS
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
V
SD
Forward on voltage
IS=1A,VGS=0V
--
--
1.4
V