ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Product ID
Pack
Marking
Qty(PCS)
Y1
SOT-323SS8050W
3000
Package Marking and Ordering Information
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
FEATURES
NPN Plastic-Encapsulate Transistors
E
B
C
SS8050W
C
E
B
SOT-323
Collector current I
C
=1.5A.
Power amplifier applications.
Complementary to SS8550W.
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 1.5 A
P
C
Collector Power Dissipation 250 mW
R
ΘJA
Thermal Resistance From Junction To Ambient 400
℃/W
T
J
,T
stg
Operation Junction And Storage Temperature Range
-55～+150 ℃
Symbol Parameter Test conditions Min Typ Max Unit
V
(BR)CBO
Collector-base breakdown voltage I
C
=100µA, I
E
=0 40 V
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=0.1mA, I
B
=0 25 V
V
(BR)EBO
Emitter-base breakdown voltage I
E
=100µA, I
C
=0 5 V
I
CEO
Collector cut-off current V
CE
=20V, I
E
=0 100 nA
I
CBO
Collector cut-off current V
CB
=40V, I
E
=0 100 nA
I
EBO
Emitter cut-off current V
EB
=5V, I
C
=0 100 nA
h
FE
(1) DC current gain(1) V
CE
=1V, I
C
=100mA 120 400
h
FE
(2) DC current gain(2) V
CE
=1V, I
C
=800mA 40
V
CE(sat)
Collector-emitter saturation voltage
I
C
=800mA, I
B
=80mA
0.5 V
V
BE(sat)
Base-emitter saturation voltage 1.2 V
f
T
Transition frequency V
CE
=10V, I
C
=50mA, f=300MHz 100 MHz
C
Ob
Collector output capacitance V
CB
=10V,I
E
=0,f=1MHz 15 pF
Typical Characteristics
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
NPN Plastic-Encapsulate
Transistors
SS8050W