SS8050
NPN Type Bipolar Transistor
Rev.A02
-
1
-
www.salltech.com
Document:S13S20002
Features
Low profile package
Ideal for automated placement
Complementary to SS8550 (PNP).
Power Dissipation of 300mW
High Stability and High Reliability
RoHS Compliant
Mechanical Data
Package: SOT-23
Lead Finish:Matte Tin
Case Material: “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Tape Reel :3000pcs
Applications
amplifying signal
Electronic switch
Oscillating circuit
variable resistance
Marking Information
Y1
Y1= Marking Code
Appearance & Symbol
Package：SOT-23
1：Base
2：Emitter
3：Collector
1
3
2
SS8050
NPN Type Bipolar Transistor
Rev.A02
-
2
-
www.salltech.com
Document:S13S20002
Parameter
Symbol
Value
Units
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current - Continuous
I
C
1500
mA
Collector Power Dissipation
P
C
300
mW
Thermal Resistance From Junction to Ambient
R
θJA
417
℃/W
Junction Temperature
T
J
-55 to +150
℃
Junction and Storage Temperature
T
STG
-55 to +150
℃
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=100uA, I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100uA, I
C
=0
5
V
Collector cut-off current
I
CEO
V
CE
=20V, I
B
=0
100
nA
Collector cut-off current
I
CBO
V
CB
=40V, I
E
=0
100
nA
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0
100
nA
DC current gain
h
FE(1))
V
CE
=1V, I
C
=100mA
120
400
h
FE(2)
V
CE
=1V, I
C
=800mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
=800mA, I
B
=80mA
0.5
V
Base -emitter saturation voltage
V
BE(sat)
I
C
=800mA, I
B
=80mA
1.2
V
Transition frequency
f
T
V
CE
=10V, I
C
=50mA,f=30MHz
100
MHz
Rank
L
H
J
Range
120-200
200-350
300-400
Absolute Maximum Ratings (T=25℃ unless otherwise noted)
Electrical Characteristics (T=25℃ unless otherwise noted)
Classification of h
FE