MX5069
High-Side N_FET Driver
WUXI MAXIN MICRO 1 / 15 无锡明芯微电子有限公
V10
General description
The MX5069 high-side N_FET driver works with an external
MOSFET and acts as an ideal diode rectifier when connected
in series with the power supply. This controller enables
MOSFETs to replace diode rectifiers in power distribution
networks, reducing power loss and voltage drop. The MX5069
controller provides charge pump gate drive for an external N-
channel MOSFET and fast response comparator to turn off the
FET when current flows in reverse.
The current limit in the external series pass N-Channel
MOSFET are programmable. The input undervoltage and
overvoltage lockout levels are programmabled by resistance
divider networks. The MX5069 automatically restarts at a
fixed duty cycle. MX5069 is available in 10-pin DFN3*3 and
MSOP10L package.
Features
Wide operating range: 5V to 85V
Adjustable current limit
Circuit breaker function for severe overcurrent events
Internal high side charge pump and gate driver for external
N-channel MOSFET
50ns fast response to current reversal
Adjustable undervoltage lockout (UVLO)
Adjustable overvoltage lockout (OVP)
Active low open drain POWER GOOD output
Available with automatic restart
10-Pin DFN3*3-10L and MSOP10 package
Applications
Server backplane systems
Base station power distribution systems
Solid state circuit breaker
24V and 48V Industrial systems
General information
Ordering information
Part Number
Description
MX5069D
DFN3*3-10L
MX5069MS
MSOP10L
MPQ
3000pcs
Package dissipation rating
Package
RθJA℃/W
DFN3*3-10L
50
MSOP10
156
Absolute maximum ratings
Parameter
Value
VIN to GND
-0.3 to 90V
SENSE, OUT to GND
-0.3 to 90V
GATE to GND
-0.3 to 100V
OUT to GND (1ms transient)
-0.3 to 95V
UVLO to GND
-0.3 to 90V
OVP, PGD to GND
-0.3 to 7V
VIN to SENSE
-0.3 to 0.3V
ILIM to GND
-0.3V to 3.5V
Maximum junction temperature,
T
JMAX
150
Storage temperature, T
stg
-65 to 150
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may
affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
Recommended operating condition
Symbol
Supply voltage
PGD off voltage
ILIM voltage
Junction temperature
MX5069
High-Side N_FET Driver
WUXI MAXIN MICRO 2 / 15 无锡明芯微电子有限公司
V10
Typical application
C
in
Z
1
R
1
R
2
R
3
R
4
VIN
UVLO/EN
OVLO
GND
ILIM
SST
R
ILIM
CSST
PGD
OUTSENSE
Q
1
GATE
MX5069
VDD
100KΩ
C
OUT
D
1
1kΩ
D
2
Q
2
C
dv/dt
Only required when using
dv/dt strat-up
V
OUT
R
SNS
100~200Ω
Z
1
R1
R2
R3
R4
VIN
UVLO/EN
OVLO
GND
ILIM
SST
R
ILIM
C
SST
PGD
OUT
SENSE
Q
1
R
SNS
GATE
MX5069
VDD
100KΩ
V
OUT
C
OUT
D
1
1kΩ
D
2
Q
2
C
dv/dt
Only required when
using dv/dt strat-up
Q
2
RSOURCE
Marking information
MX5069D
YYWWA
Part number
Week code
Internal code
Pin 1
Year code