ABSOLUTE MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Parameter Symbol Value Unit

Drain-Source Voltage V

DS

60 V

Gate-Source Voltage

V

GS

±20 V

Continuous Drain Current

I

D

340 mA

Plused Drain Current

1

I

DM

800 mA

Power Dissipation P

D

0.2 W

Thermal Resistance from Junction to Ambient R

θJA

625

℃/W

Junction Temperature

T

J

150

℃

Storage Temperature

T

STG

-55~ +150

℃

CREATEK Microelectronics

2N7002K

Rev. 3.0

www.crea-tek.com

1

N-Channel MOSFET in SOT-23

Features

Case: SOT-23 (plastic package).

Lead free; RoHS compliant; Halogen free

Molding Compound Flammability Rating:

UL 94 V-0

Terminals: High temperature soldering guaranteed:

260 °C/10 sec. at terminals

■

■

■

■

■

■

High density cell design for Low RDS(on)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

ESD protected Gate HBM 2.0KV

Mechanical Data

■

Applications

■

Load/Power Switching

■

Interfacing Switching

■

DC-DC Converters

■

Power management functions

■

Analog Switch

■

MOSFET ELECTRICAL CHARACTERISTICS(T

a

=25℃ unless otherwise noted)

Parameter Symbol Test Condition Min Type Max Unit

Static Characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

= 0V, I

D

=250µA

60 V

Zero gate voltage drain current I

DSS

V

DS

=48V,V

GS

= 0V

1

uA

Gate-body leakage current I

GSS

V

GS

=±20V, V

DS

= 0V ±10 µA

Gate threshold voltage

2

V

GS(th)

V

DS

=V

GS

, I

D

=250µA

1

1.4

2.5

V

Drain-source on-resistance

2

R

DS(on)

V

GS

=10V, I

D

=500mA

1.3

5

Ω

V

GS

=4.5V, I

D

=200mA

1.4

5.3

Dynamic characteristics

3

Input Capacitance C

iss

V

DS

=10V,V

GS

=0V,f=1MHz

40

pFOutput Capacitance C

oss

30

Reverse Transfer Capacitance C

rss

10

Switching Characteristics

3

Turn-on delay time

t

d(on)

V

GS

=10 V, V

DD

=50V, R

G

=50Ω

R

GS

=50Ω,R

L

=250Ω

10

ns

Turn-off delay time t

d(off)

15

Reverse recovery Time t

rr

V

GS

=0V,I

S

=300mA,V

R

=25V,

dl

s

/d

t

=-100A/µS

30

Recovered charge Q

r

V

GS

=0V,I

S

=300mA,V

R

=25V,

dl

s

/d

t

=-100A/µS

30 nC

Source-Drain Diode characteristics

Diode Forward voltage

2

V

SD

V

GS

=0V, I

S

=300mA

1.5

V

Continuous Diode Forward Current I

S

0.2

A

Pulsed Diode Forward Current

1

I

SM

0.53

A

GATE-SOURCE ZENER DIODE

Gate-Source Breakdown Voltage

BV

GSO

IGS=±1mA(Open Drain) ±21.5 ±30 V

Notes:

1.

Repetitive rating:Pluse width limited by junction temperature.

2.

Pulse Test : Pulse width 300μs, duty cycle≤%.

3.

Guaranteed by design, not subject to production testing.

CREATEK Microelectronics

2N7002K

Rev. 3.0

www.crea-tek.com

2