Product Overview
DTC123JM3: NPN Bipolar Digital Transistor (BRT)
For complete documentation, see the data sheet.
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Part Electrical Specifications
Product Compliance Status Polarity I
C
Continuo
us (A)
V
(BR)CEO
Min (V)
h
FE
Min R1 (kΩ) R2 (kΩ) R1/R2
Typ
V
i(off)
Max
(V)
V
i(on)
Min
(V)
Package
Type
DTC123JM3T5G
AEC
Qualified
Pb-free
Halide free
Active NPN 0.1 50 80 2.2 47 0.05 0.5 1.1 SOT-
723-3
NSVDTC123JM3T5G
AEC
Qualified
PPAP
Capable
Pb-free
Halide free
Active NPN 0.1 50 80 2.2 47 0.05 0.5 1.1 SOT-
723-3
For more information please contact your local sales support at www.onsemi.com.
Created on: 10/29/2017