Document Number: 83763 For technical questions, contact: sensorstechsupport@vishay.com
www.vishay.com
Rev. 1.8, 20-Sep-10 1
Transmissive Optical Sensor with Phototransistor Output
TCST1030
Vishay Semiconductors
DESCRIPTION
The TCST1030 is a transmissive sensor that include an
infrared emitter and phototransistor, located face-to-face on
the optical axes in a leaded package which blocks visible
light.
FEATURES
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 8.3 x 4.7 x 8.15
• Gap (in mm): 3.1
• Aperture: none
• Typical output current under test: I
C
= 2.4 mA
• Daylight blocking filter
• Emitter wavelength: 950 nm
• Lead (Pb)-free soldering released
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Optical switch
• Shaft encoder
• Detection of opaque material such as paper
• Detection of magnetic tapes
Note
(1)
Conditions like in table basic characteristics/coupler
Note
(1)
MOQ: minimum order quantity
19171_1
21837
PRODUCT SUMMARY
PART NUMBER GAP WIDTH
(mm)
APERTURE WIDTH
(mm)
TYPICAL OUTPUT
CURRENT UNDER TEST
(1)
(mA)
DAYLIGHT
BLOCKING FILTER
INTEGRATED
TCST1030 3.1 - 2.4 Yes
ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME
(1)
REMARKS
TCST1030 Tube MOQ: 5200 pcs, 65 pcs/tube 3.4 mm lead length
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
COUPLER
Total power dissipation T
amb
≤ 25 °C P
tot
250 mW
Ambient temperature range T
amb
- 25 to + 85 °C
Storage temperature range T
stg
- 25 to + 100 °C
Soldering temperature 1.6 mm from case, t ≤ 10 s T
sd
260 °C
INPUT (EMITTER)
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 μs I
FSM
3A
Power dissipation T
amb
≤ 25 °C P
V
100 mW
Junction temperature T
j
100 °C
www.vishay.com For technical questions, contact: sensorstechsupport@vishay.com
Document Number: 83763
2 Rev. 1.8, 20-Sep-10
TCST1030
Vishay Semiconductors
Transmissive Optical Sensor with
Phototransistor Output
ABSOLUTE MAXIMUM RATINGS
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
OUTPUT (DETECTOR)
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
100 mA
Power dissipation T
amb
≤ 25 °C P
V
150 mW
Junction temperature T
j
100 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
0
100
200
300
400
95 11088
P - Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode
150 120 90 60
30
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
COUPLER
Collector current V
CE
= 5 V, I
F
= 10 mA I
C
1.2 2.4 mA
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.8 V
INPUT (EMITTER)
Forward voltage I
F
= 60 mA V
F
1.25 1.5 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT (DETECTOR)
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 10 μA V
ECO
7V
Collector dark current V
CE
= 25 V, I
F
= 0 A, E = 0 lx I
CEO
10 100 nA
SWITCHING CHARACTERISTICS
Turn-on time
I
C
= 1 mA, V
CE
= 5 V,
R
L
= 100 Ω (see figure 2)
t
on
15 μs
Turn-off time
I
C
= 1 mA, V
CE
= 5 V,
R
L
= 100 Ω (see figure 2)
t
off
10 μs