Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
CREATEK Microelectronics
SB1020F thru SB10100F-HM
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Rev. 1.0
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1
Schottky Barrier Rectifier Diodes in ITO-220A
Maximum Ratings and Electrical Characteristics
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Power switching application
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Hard switched and high frequency circuits
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Uninterruptible power supply
Applications
Mechanical Data
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Case: ITO-220A (plastic
package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
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Characteristic Symbol
SB
1020F
-HM
SB
1030F
-HM
SB
1040F
-HM
SB
1050F
-HM
SB
1060F
-HM
SB
1080F
-HM
SB
10100F
-HM
Unit
Peak Repetitive Reverse Voltage
Working P eak Reverse Vol tage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 50 60 80 100 V
RMS Reverse Voltage V
R(RMS)
14 21 28 35 42 56 70 V
Average Rectified Output Current @T
C
= 95°C I
O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Singl e hal f si ne-wave superimposed on rated load
(JEDEC Method)
I
FSM
150 A
Forward Voltage @I
F
= 10A V
FM
0.55 0.75 0.85 V
@T
A
= 25°C Peak Reverse Current
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
0.5
50
mA
Typical Junct i on Capacitance (Note 1) C
j
700 pF
Typical Thermal Resist ance Junc tion to Case (Note 2) R
JC
3.5 K/W
Operating and St orage Temperature Range T
j
, T
STG
-65 to +150 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
Ratings at 25 °C, ambient temperature unless otherwise specified
PIN 1 +
PIN 2 -
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AEC-Q101 Qualified
Rev. 1.0
www.crea-tek.com
2
CREATEK Microelectronics
SB1020F thru SB10100F-HM
I , AVERAGE OUTPUT CURRENT (A)
(AV)
0
2
4
6
8
10
10 40 60 80 100 120 140150
T
L
, LEAD TEMPERATURE (ºC)
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
100
1000
2000
0.1 1.0 10 10
0
C , CAPACITANCE (pF)
j
V
R
, REVERSE VOLTAGE (V)
T = 25ºC
j
f = 1MHz
0
30
60
90
120
150
110100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
8.3ms Single Half Sine-Wave
JEDEC Method
0.1
10
20
40
0
0.5 1.0 1.5 2.0 2.5
I, NSTA N TA NEOUS FORWARD CURRENT (A)
F
V
F
,
INSTANTANEOUS FORWARD
VOLTAGE
(V)
1020F - 1040F
1050F - 1060F
1080F - 10100F
T = 25ºC
j
Pulse Width = 300 µs
2% Duty Cycle
Fig. 1 Forward Current Derating Curve
Fig. 2 Typical Forward Characteristics
Fig. 4 Typical Junction Capacitance