Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
CREATEK Microelectronics
SB1020F thur SB10100F
■
■
■
■
■
■
Rev. 1.0, 1-Apr-2013
www.crea-tek.com
1
Schottky Barrier Rectifier Diodes in ITO-220A
Maximum Ratings and Electrical Characteristics
■
Power switching application
■
Hard switched and high frequency circuits
■
Uninterruptible power supply
Applications
Mechanical Data
■
Case: ITO-220A
(plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
■
■
Characteristic Symbol
SB
1020F
SB
1030F
SB
1040F
SB
1050F
SB
1060F
SB
1080F
SB
10100F
Unit
Peak Repetitive Reverse Voltage
Working P eak Reverse Vol tage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 50 60 80 100 V
RMS Reverse Voltage V
R(RMS)
14 21 28 35 42 56 70 V
Average Rectified Output Current @T
C
= 95°C I
O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Singl e hal f si ne-wave superimposed on rated load
(JEDEC Method)
I
FSM
150 A
Forward Voltage @I
F
= 10A V
FM
0.55 0.75 0.85 V
@T
A
= 25°C Peak Reverse Current
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
0.5
50
mA
Typical Junct i on Capacitance (Note 1) C
j
700 pF
Typical Thermal Resist ance Junc tion to Case (Note 2) R
JC
3.5 K/W
Operating and St orage Temperature Range T
j
, T
STG
-65 to +150 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
Ratings at 25 °C, ambient temperature unless otherwise specified
PIN 1 +
PIN 2 -