SMB 3/$67,&
6,/,&21
5(&7,),(56
SS52~SS520
0$;,0805$7,1*6$1'&+$5$&7(5,67,&6
# & $PELHQW 7HPSHUDWXUH XQOHVV RWKHUZLVH QRWHG
http://www.lujingsemi.com
Rev. 1.2, Oct-23
ϭ
3.94
3.30
2.20
1.95
4.57
4.06
0.305
0.152
2.4
4
2.18
0.203MAX.
5.59
5.21
1.52
0.76
Unit:
mm
)($785(6
ƔPlastic package has Underwriters Laboratory
Flammability Classif ication 94V- O Utilizing
ƔMetal silicon junction ,majority carrier conduction
ƔBuilt-in strain relief
ƔFor surface mo unted applications
ƔLow power loss ,high efficiency,High surge capability
ƔHigh current capability ,Low forward voltage drop
ƔFor use in low voltage ,high frequency inverters, free
wheeling ,
and polarity protection applications
ƔHigh temperature soldering guaranteed:260 ć/10 seconds
at
terminals
ƔComponent in accordance to RoHS 2015/863 and
WEEE
2012/19/EU
0(&+$1,&$/ '$7$
ƔCase:SM%moldedplasticbody
ƔTerminals:Lead solderable per MIL-STD-750,method 2026
��Polarity:Color band denotes cathode end
TYPE NUMBER
SYMBOL
SS2 S6 SS4 SS5 SS6 SS8
SS1
SS20 UNITS
Maximum recurrent peak reverse voltage
V
RRM
20 30 40 50 60 80
10
200
V
V
RMS
14 21 28  
7
140
V
Maximum RMS voltage
Maximum DC blocking voltage
V
DC
20 30 40 50 60 80
150
200
V
Maximum Average Forward rectified
Current0.375"(9.5mm) lead length
I
F(AV)
.0
A
Peak forw ard surge current 8.3ms single half sine-w ave
superimposed on rated load
I
FSM
0.0
A
Maximuminstantaneousforwardvoltageat.0A(
Note1)
V
F
0.5 0.7 0.85
0.9
V
Maximum reverse current
at rated DC blocking voltage perdiode
@T
A
=25
ć
I
R
0.
m
A
@T
A
=100ć
10.0
7\SLFDO7KHUPDO5HVLVWDQFH1RWH
R
©
JA

ć
/
W
Storage Temper
ature
T
STG
-5----+150
ć
Operation Junction Temperature
T
j
- 55 --
-- + 125
ć
NOTE: 1
.Measured at 1MHz and applied reverse v
oltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2(5.0x
5.0mm) copper pad areas
0.0
Typical junction capacitance(Note 3)
CJ

00
5$7,1*6$1'&+$5$&7(5,67,&&859(6
http://www.lujingsemi.com
2
Rev. 1.2, Oct-23
SS52~SS520
0
30
60
90
120
150
1 100
PEAK FORWARD SURGE
CURRENT(AMPERES)
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0 20 40 60 80 100 120 150
0
2.0
3.0
4.0
5.0
1.0
AVERAGE FORWARD CURRENT
AMPERES
LEAD TEMPERATURE ( C)
P.C.B.mounted on
0.55 X 0.55"(14 X 14mm)
copper pad areash
),*0$;,0801215(3(7,7,9(3($.
)25:$5'685*(&855(17
),*)25:$5'&855(17'(5$7,1*&859(
10
180%(52)&<&/(6$7+]
),*7<3,&$/5(9(56(
&+$5$&7(5,67,&6
),*7<3,&$/,167$17$1(286)25:$5'
&+$5$&7(5,67,&6
0.01
0.1
1
50
10
0 0.2 0.4 0.6 0.8 1.0 1.61.41.2
INSTANTANEOUS FORWARD CURRENT( AMPERES)
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
TJ=25 C
T
J=125 C
T
J=150 C
PULSE WIDTH=300 S
1% DUTY CYCLE
SS52-SS54
SS55-SS520
0.001
0.01
1
0.1
10
20
100
INSTANTANEOUS REVERSE CURRENT (mA)
TJ=25 C
SS52-SS54
SS55-SS520
TJ=75 C
T
J=125 C
0 20 40 60 80
3(5&(172)5$7('3($.5(9(56(92/7$*(
),*7<3,&$/75$16,(17���7+(50$/
,03('$1&(
1 10
REVERSE VOLTAGE. VOLTS
10
0.1 100
100
1000
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE(pF)
TJ=25 C
f=1.0MH
Z
Vsig=50mVp-p
SS52-SS54
SS55-SS520
1
T, PULSE DURATION ,sec.
1
10
0.1
0.10.01 10 100
100
TRANSIENT THERMAL IMPEDANCE, C/ W