CS20N65A
N-Channel Enhancement Mode Power MOSFET
MAIN CHARACTERISTICS
I
D
20A
V
DSS
650V
R
DSON
-typ
（
@V
GS
=10V
）
0.38Ω
FEATURES
• Fast Switching
• Low ON Resistance
• Low Gate Charge
• 100% Single Pulse avalanche energy Test TO-220F TO-247
APPLICATIONS
• Power switch circuit of adaptor and charger.
MECHANICAL DATA
• Case: Molded plastic
• Mounting Position: Any
• Molded Plastic: UL Flammability Classification Rating 94V-0
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Solder bath temperature 275℃ maximum,10s per JESD 22-B106
Product specification classification
Part Number Package Mode Name Pack
CS20N65A8 TO-220F(1.3mm) CS20N65A Tube
CS20N65A6 TO-247 CS20N65A Tube
www.lxmicro.com 1 Of 5 LingXun Rev:01
CS20N65A
N-Channel Enhancement Mode Power MOSFET
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics Symbol
Value
Unit
220F 247
Drain-Source Voltage
V
DS
650 V
Gate-Source Voltage
V
GS
±
30
V
Continue Drain Current
I
D
20 A
Pulsed Drain Current (Note1)
I
DM
80 A
Power Dissipation
P
D
45 250 W
Single Pulse Avalanche Energy (Note1) E
AS
700
mJ
Operating Temperature Range
T
J
150 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Thermal Resistance, Junction to Case
R
θ
JC
2.78 0.5 °C/W
Thermal Resistance, Junction to
Ambient
R
θ
JA
62.5 40 °C/W
Note1:Pulse test: 300 µs pulse width, 2 % duty cycle
Electrical Characteristics at Tc=25°C unless otherwise specified
Characteristics Test Condition Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
V
GS
= 0 V,I
D
= 250 µA BV
DSS
650 - - V
Drain-Source Leakage Current
V
DS
= 650 V, V
GS
= 0 V I
DSS
- - 1
µA
Gate Leakage Current
V
GS
= ± 30 V, V
DS
= 0 V I
GSS
- -
±
100
nA
Gate-Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA V
GS(th)
2 - 4
V
Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 10 A
RDS(on) - 0.38 0.46
Ω
Forward Transconductance
V
DS
= 15 V, I
D
= 10 A
gfs - 18 -
S
Input Capacitance
V
GS
= 0 V, V
DS
= 25 V,
f = 1 MHz
Ciss - 2896 -
pF
Output Capacitance Coss - 270 -
pF
Reverse Transfer Capacitance Crss - 15.6 -
pF
Turn-on Delay Time(Note2)
I
D
= 20 A, V
DD
= 325 V,
R
G
= 10 Ω
td(ON) - 21.5 -
ns
Rise Time(Note2) tr - 43 -
ns
Turn-Off Delay Time(Note2) td(OFF) - 97.5 -
ns
Fall Time(Note2) tf - 17.2 -
ns
Total Gate Charge(Note2)
I
D
= 20 A, V
DD
= 520 V,
V
GS
= 10 V
QG - 57.4 -
nC
Gate to Source Charge(Note2) QGS - 16.5 -
nC
Gate to Drain Charge(Note2) QGD - 19 -
nC
Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified
Characteristics Test Condition Symbol Min. Typ. Max. Unit
Maximun Body-Diode Continuous
Current
IS - - 20
A
Maximun Body-Diode Pulsed
Current(Note2)
ISM - - 80
A
Drain-Source Diode Forward Voltage
I
SD
= 20 A
VSD - - 1.5
V
Reverse Recovery Time(Note2)
I
SD
= 20 A, V
GS
= 0 V,
dI
F
/ dt = 100 A/µs
trr - 492.3 -
ns
Reverse Recovery Charge(Note2) Qrr - 7.6 -
μC
Note2:Pulse test: 300 µs pulse width, 2 % duty cycle
www.lxmicro.com 2 Of 5 LingXun Rev:01