Parameter Symbol Value Units
A
The ESD3.3V02D-A is designed to protect voltage sensitive components
from ESD and transient voltage events. Excellent clamping capability, low
leakage, and fast response time, make these parts ideal for ESD protection
on designs where board space is at a premium. Because of its small size,
it is suited for use in cellular phones, MP3 players, digital cameras and
many other portable applications where board space is at a premium.
ESD3.3V02D-A
Mechanical Characteristics
Features
Description
Applications
ROHS
Revision March 1,2022 www.unsemi.com.tw
www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
1/3
Mechanical Data
Case: 0201/DFN0603 package,molded plastic.
Terminals:Gold plated, solderable per MIL-STD-750,
method 2026.
Polarity: Color band denotes cathode end.
Mounting position: Any
Unidirectional ESD protection
Low Clamping Voltage
Surface mount package.
Ultra small SMD package.

Low leakage current
High component density.
Provides ESD protection to IEC61000-4-2(ESD):
±30kV (air discharge)
±30kV (contact discharge)

Lead Soldering Temperature
Storage Temperature Range
Operating Junction Temperature Range
PPP
TL
TSTG
TJ
96
260 (10 sec.)
-55 to +150
-40 to +125
Watts
°C
°C
°C
Functional Diagram
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Peripherals
Pagers
Transient Voltage Suppressors for ESD Protection
Characteristic Curves
Fig2. Power Rating Derating CurveFig1. 8/20μs Pulse Waveform
Fig4. Typic Capacitance vs. ReverseFig3. Clamping Voltage vs. Peak Pulse Current
ROHS
Revision March 1,2022 www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
ROHS
Electrical Characteristics @ 25 Unless Otherwise Specified )
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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ESD3.3V02D-A
0 5 10 15
20
25
30
120
t
r
100
80
60
40
Peak Value I
PP
20
0
t
d
=t I
PP
/2
TEST
WAVEFORM
PARAMETERS
t
r
=8s
t
d
=
I
PP
- Peak Pulse Current - % of I
PP
t - Time (μs)
0 25 50 75 100 125 150
110
100
40
30
20
10
0
% of Rated Power
90
80
70
60
50
Ambient Temperature T
A
(ºC)
Transient Voltage Suppressors for ESD Protection
VRWM
VBR
IR
CJ
Reverse Working Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Junction capacitance
--
I
T
=1mA
V=3.3 V; T=25°C
V =0Vf=1MHz;
l=1AT
l =5A��T
l =7A, T
l=1A
l =8A
l =16A
--
4.5
--
--
--
--
--
--
--
--
--
--
--
45
--
--
--
8.0
9.8
12.0
3.3
--
2.5
--
7.6
10.5
13.8
--
--
--
V
V

pF
V
V
V
V
V
V
TLP Clamping Voltage V
CL
Characteristics Symbol Test Conditions Typ. Max UnitMin.
Positive Clamping Voltage VC