The ESD05V88D-2C is designed to protect voltage sensitive components
from ESD and transient voltage events. Excellent clamping capability, low
leakage, and fast response time, make these parts ideal for ESD protection
on designs where board space is at a premium.
ESD05V88D-2C
Mechanical Characteristics
Features
Description
Applications
ROHS
Revision March 1,2022 www.unsemi.com.tw
www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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Mechanical Data
DFN1006P3 (1.0x0.6x0.5mm) Package
Molding Compound Flammability Rating : UL 94V-O
Weight 0.5 Milligrams (Approximate)
Lead Finish : Lead Free

Protects two Bidirectional I/O lines
Low clamping voltage
Working voltages : 5.0V
Low leakage current
IEC61000-4-2(ESD) ±15kV (air discharge)
±8kV (contact discharge)
Functional Diagram
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Peripherals
Pagers
Transient Voltage Suppressors for ESD Protection
Parameter Symbol Value Units

Lead Soldering Temperature
Storage Temperature Range
Operating Junction Temperature Range
PPP
TL
TSTG
TJ
90
260 (10 sec.)
-55 to +150
-40 to +125
Watts
°C
°C
°C
Characteristic Curves
Fig2. Power Derating CurveFig1. 8/20μs Pulse Waveform
ROHS
Revision March 1,2022 www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
ROHS
Electrical Characteristics @ 25 Unless Otherwise Specified )
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
2/3
ESD05V88D-2C
Transient Voltage Suppressors for ESD Protection
VRWM
VBR
IR
VC
CJ
Reverse Working Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Positive Clamping Voltage
Capacitance Between I/O And GND
--
I=1mA;
V =5.0 V, T=25°C;
I =3 A, T
V = 0 V, f = 1MHz ;
--
6.0
--
--
--
--
--
--
--
10
5.0
--
1.0
30.0
--
V
V

V
pF
Characteristics Symbol
Test Conditions Typ. Max. UnitMin.
0 5 10 15
20
25
30
120
t
r
100
80
60
40
Peak Value I
PP
20
0
t
d
=t I
PP
/2
TEST
WAVEFORM
PARAMETERS
t
r
=8s
t
d
=
I
PP
- Peak Pulse Current - % of I
PP
t - Time (
0 25 50 75 100 125 150
110
100
40
30
20
10
0
% of Rated Power
90
80
70
60
50
Ambient Temperature T
A
(ºC)
Fig3. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr
30ns
=
Time
60ns
Percent of Peak Pulse
Current %