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Product Summary
V
(BR)DSS
R
DS(on)TYP
I
D
60V
1.8Ω@10V
0.34A
2.1Ω@4.5V
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
1,2
I
D
0.34
A
Pulsed Drain Current (tp=10µs)
I
DM
1.36
A
Power Dissipation
P
D
0.35
W
Thermal Resistance from Junction to Ambient
1,2
R
θJA
350
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
℃
SOT-23
Schematic diagram
2N7002KL
60V N-Channel
MOSFET
G
S
D
72K
L
Feature
Surface Mount Package
High Density
Cell Design for Extremely Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
ESD Protcet
Application
Small Servo Motor Controls
Power MOSFET Gate Drivers
Switching Application
MARKING:
2N7002KL
http://www.sh-greenpower.com Shanghai GreenPower Electronics Co.,Ltd. 2
MOSFET ELECTRICAL CHARACTERISTICS(T
a
= 25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Off Characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
60
V
Zero gate voltage drain current
I
DSS
V
DS
= 48V, V
GS
= 0V
1
µA
Gate-body leakage current
I
GSS
V
GS
= ±20V, V
DS
= 0V
±5
µA
On Characteristics
3
Gate threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
1.0
1.5
2.5
V
Drain-source on-resistance
R
DS(on)
V
GS
= 10V, I
D
= 0.3A
1.8
Ω
V
GS
= 4.5V, I
D
= 0.2A
2.1
Forward tranconductance
g
FS
V
DS
= 10V, I
D
= 0.2A
80
mS
Dynamic Characteristics
Input Capacitance
C
iss
V
DS
= 30V, V
GS
= 0V, f = 1MHz
16.6
pF
Output Capacitance
C
oss
1.79
Reverse Transfer Capacitance
C
rss
2.38
Switchig Characteristics
Turn-on Delay Time
t
d(on)
V
DD
= 30V, V
GS
= 10V,
R
L
= 100Ω, R
G
= 3Ω
3.8
ns
Turn-on Rise Time
t
r
2.9
Turn-off Delay Ttime
t
d(off)
14
Turn-off Fall Time
t
f
8
Total Gate Charge
Q
g
V
DS
=30V, I
D
=0.3A, V
GS
=10V
1.3
nC
Gate-Source Charge
Q
gs
0.14
Gate-Drain Charge
Q
gd
0.45
Diode Characteristics
V
SD
I
S
=0.3A, V
GS
= 0V
1.2
V
Notes :
1.R
θJA
is measured with the device mounted on 1 in
2
FR4 board with 1oz. single side copper, in a still air environment with T
A
= 25°C.
2.R
θJA
is measured in the steady state
3.Pulse test : Pulse width ≤ 380μs, duty cycle ≤ 2%.
Diode Forward Voltage
3
2.5
3.0