DMD90N40
1 / 5
May,2015-REV.00
1. Gate
2. Drain
3. Source
Pin Definition:
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
Current
40 3.8 @ V
GS
=10V
90A
●
●
●
●
40V N-Channel Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
=25°C, unless otherwise specified)
RDS(ON) < 3.8mΩ@ VGS = 10V
Low On-Resistance
Low Input Capacitance.
Low Miller Charge
Low Input / Output Leakage
Ordering Information
●
Case: TO-252 Package
Part No.
Package
Packing
DMD90N40-TR
TO-252 2.5Kpcs / 13” Reel
Block Diagram
D
G
S
●
Parameter Symbol Ratings Unit
Drain-Source Voltage V
DSS
40V V
Gate-Source Voltage V
GSS
±20V V
Drain Current-Continuous @ T
C
=25℃
I
D
90 A
Drain Current-Continuous @ T
C
=100℃
57 A
Drain Current-Pulsed
NOTE 1
I
DM
360 A
Avalanche Current
NOTE 2
I
AS
79 A
Avalanche Energy, L=0.1mH
NOTE 2
E
AS
312 mJ
Maximum Power Dissipation @ T
C
=25℃
P
D
101 W
Maximum Power Dissipation @ T
A
=25℃
0.81 W
Storage Temperature Range T
STG
-50 to 150°C °C
Operating Junction Temperature Range T
J
-50 to 150°C °C
2 / 5
THERMAL DATA
40V N-Channel Power MOSFET
ELECTRICAL CHARACTERISTICS (T
C
=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Junction to Ambient
NOTE 2
θ
JA
62
°C/W
Junction to Case
θ
JC
1.23
°C/W
May,2015-REV.00
Parameter Symbol Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V , I
DS
=250uA 40 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=32V, V
GS
=0V - - 1 uA
Gate-Source Leakage Current I
GSS
V
GS
=±20V , V
DS
=0V - -
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
GS
=V
DS
, I
DS
=250uA 1.2 1.6 2.5 V
Drain-Source On-Resistance R
DS(ON)
V
GS
=10V , I
DS
=25A - 3.1 3.8 mΩ
V
GS
=4.5V , I
DS
=12A - 4.0 5.0 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
V
DS
=25V, V
GS
=0V, f=1MHz
- 4940 -
pF Output Capacitance C
oss
- 425 -
Reverse Transfer Capacitance C
rss
- 170 -
SWITCHING CHARACTERISTICS
Turn-On Delay Time
NOTE3,4
T
d(on)
V
DS
=25V, V
GS
=10V, I
D
=1A ,
R
GEM
=6Ω
- 28 -
ns
Rise Time
NOTE3,4
t
r
- 3.2 -
Turn-Off Delay Time
NOTE3,4
T
d(off)
- 89 -
Fall Time
NOTE3,4
t
f
- 14 -
Total Gate Charge at 4.5V
NOTE3,4
Q
g
V
DS
=20V, I
DS
=10A, V
GS
=4.5V
- 44.4 -
nC Gate to Source Gate Charge
NOTE3,4
Q
gs
- 9.6 -
Gate to Drain ”Miller” Charge
NOTE3,4
Q
gd
- 16 -
SWITCHING CHARACTERISTICS
Drain-Source Diode Forward Voltage V
SD
V
GS
=0V, I
S
=1A - - 1.0 V
Body Diode Reverse Recovery Time t
rr
I
f
=30A, dl/dt=100A/μs,
TJ=25°C
- - 90 ns
Body Diode Reverse Recovery Charge Q
rr
- - 180 nC
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V, VGS=10V, L=0.1mH, IAS=79A, Starting TJ=25℃
3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4. Essentially independent of operating temperature
DMD90N40