6N60
1 / 7
Apr.2018-REV.01
1. Gate
2. Drain
3. Source
Pin Definition:
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Current(A)
600
1.5 @ V
GS
=10V
6
●
●
●
●
600V N-Channel Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
=25°C, unless otherwise specified)
R
DS(ON)
<1.5Ω @ V
GS
=10V
Fast switching capability
Low gate charge
Lead free in compliance with EU RoHS directive.
Green molding compound
Block Diagram
Ordering Information
●
Case: TO-220,ITO-220,TO-262,TO-263 Package
D
G
S
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
600
V
Gate-Source Voltage V
GSS
±30 V
Avalanche Current (Note 2) I
AR
6
A
Continuous Drain Curr ent I
D
6
A
Pulsed Drain Current (Note 2) I
DM
24.8
A
Avalanche Energy Single Pulsed (Note 3) E
AS
440
mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt
4.5 ns
Power Dissipation
TO-220/TO-262/TO-263
P
D
125
W
ITO-220
42
W
TO-251/TO-252
55 W
Junction Temperature T
J
+150 °C
Operating Temperature T
OPR
-55 ~ +150 °C
Storage Temperature T
STG
-55 ~ +150 °C
●
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device oper ation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 25mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25 Ω, Starting T
J
= 25°C
4. I
SD
≤ 6.2A, di/dt ≤200A/μs, V
DD
≤ BV
DSS
, Starting T
J
= 25°C
Part No.
Package
Packing
DMT6N60-TU
TO-220 50pcs / Tube
DMF6N60-TU
ITO-220 50pcs / Tube
DMK6N60-TU TO-262
50pcs / Tube
DMG6N60-TU
TO-263
50pcs / Tube
DMG6N60-TR
TO-263 800pcs / 13" Reel
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THERMAL DATA
6N60
600V N-Channel Power MOSFET
ELECTRICAL CHARACTERISTICS (T
C
=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Junction to Ambient
TO-220/ITO-220
TO-262 /TO-263
θ
JA
62.5
°C/W
Junction to Case
TO-220
TO-262/TO-263
θ
JC
1.2
°C/W
ITO-220
3.5
PARAMETER SYMBOL T EST CONDITIONS TYPMIN MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
GS
V=0V, I
D
=250μA 600 V
Drain-Source Leakage Current I
DSS
V
DS
=600V, V
GS
=0V 10 μA
V
DS
=480V, V
GS
=0V, T
J
=125°C 10 μA
Gate- Source Leakage Current
Forward
I
GSS
V
G=
30V, V
DS
=0V 100 nA
Reverse V
GS
=-30V, V
DS
=0V -100 nA
Breakdown Voltage Temperature Coefficient
△BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C 0.53 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
DS
V=V
GS
, I
D
=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance R
DS(ON)
GS
V=10V, I
D
=3.1A 1.0 1.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
V
DS
=25V, V
GS
=0V, f=1.0 MHz
770 1000 pF
Output Capacitance C
OSS
pF 95 120
Reverse Transfer Capacitanc e C
RSS
10 13 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)
V
DD
=300V, I
D
=6.2A, R
G
=25Ω
(Note 1, 2)
40 50 ns
Turn-On Rise Time t
R
ns 70 150
Turn-Off Delay Time t
D(OFF)
40 90 ns
Turn-Off Fall Time t
F
80 100 ns
Total Gate Charge Q
G
V
DS
=480V, I
D
=6.2A, V
GS
=10V
(Note 1, 2)
20 25 nC
Gate-Source Charge Q
GS
nC 4.9
Gate-Drain Charge Q
GD
9.4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
GS
V=0V, I
S
=6.2 A 1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
6.2 A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
24.8 A
Reverse Recovery Time t
rr
V
GS
=0V, I
S
=6.2A,
dI
F
/dt =100 A/
μs (Note 1)
290 ns
Reverse Recovery Charge Q
RR
μC 2.35
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
Apr.2018-REV.01