SBT30L200CT
SBT30L200FCT
SBT30L200CK
SBT30L200CG
20A LOW VF SCHOTTKY RECTIFIER
Features
• Ultra Low Forward Voltage Drop
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
Mechanical Data
•
Case: TO-220AB, ITO-220AB,TO-262AB,TO-263AB
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
1 / 4
Mar-2018-REV.01
Ordering Information
Part No.
Package
Packing
TO-220AB
50pcs / Tube
SBT30L200CT
ITO-220AB
50pcs / Tube
SBT30L200FCT
TO-262AB
50pcs / Tube
SBT30L200CK
TO-263AB
50pcs / Tube
SBT30L200CG
TO-263AB
800pcs / Reel
SBT30L200CG
MAXIMUM RATINGS(TA=25
o
C unless otherwise noted)
Note : 1. Mounted on infinite heatsink.
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
200 V
Maximum average forward rectified current
per diode
per device
I
F(AV)
30
15
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode I
FSM
250 A
Typical thermal resistance per diode (Note 1) R
JC
15
o
C/W
Operating junction temperature range T
J
-55 to + 150
o
C
Storage temperature range T
STG
-55 to + 150
o
C
Maximum rms voltage
V
RMS
140
V
2 / 4
Mar-2018-REV.01
SBT30L200CT
SBT30L200FCT
SBT30L200CK
SBT30L200CG
ELECTRICAL CHARACTERISTICS(TA=25
o
C unless otherwise noted)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
T
C
, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
V
R
, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
RATING AND CHARACTERISTIC CURVES
1
10
100
1000
110100
C
J
, Junction Capacitance (pF)
Per Diode
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
I
R
, Reverse Current (mA)
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 150°C
Per Diode
PA RAME TE R SYM BOL TE ST CO NDITIONS MIN. TYP. MAX. UNIT
Breakdo wn voltage per di od e V
BR I R=0.5mA
200
- - V
Instantaneo us forward voltage per
diode
V
F
I F=3A
I
F=5A
I F=15A
T
J=25
o
C
-
-
-
0.69
0.74
0.90
-
-
0.97
V
I
F=3A
I
F=5A
I F=15A
T
J=125
o
C
-
-
-
0.41
0.52
0.73
-
-
-
V
Reve rse c urrent
per diod e I R
VR=140V
- 5 - A
VR=200V
T
J=25
o
C
T
J=125
o
C
-
-
-
12
50
-
A
mA
V
F
, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
0
2.5
5
7.5
10
12.5
15
17.5
0 25 50 75 100 125 150
I
F
, Forward Current (A)
per diode
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
I
F
, Forward Current (A)
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
T
J
= 75°C
per diode