SBT30L150CT
SBT30L150FCT
SBT30L150CK
SBT30L150CG
30A LOW VF SCHOTTKY RECTIFIER
Features
•
Ultra Low Forward Voltage Drop,low power loss
• High efficiency operation
•
Low thermal resistance
Mechanical Data
•
Case: TO-220AB, ITO-220AB,TO-262AB,TO-263AB
•
Case Material: Molded Plastic,
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
1 / 4
Mar-2018-REV.01
Ordering Information
Part No.
Package
Packing
TO-220AB
50pcs / Tube
SBT30L150CT
ITO-220AB
50pcs / Tube
SBT30L150FCT
TO-262AB
50pcs / Tube
SBT30L150CK
TO-263AB
50pcs / Tube
SBT30L150CG
TO-263AB
800pcs / Reel
SBT30L150CG
Note : 1. Device mounted on a infinite heatsink , then measured the center of the marking side.
o
Maximum Ratings And Electrical Characteristics (T
A
=25 C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Maximum repetitive peak reverse voltage VRRM 150 V
Maximum rms voltage VRMS 105 V
Maximum dc blocking voltage VR 150 V
Maximum average forward rectified current
per diode
per device
IF(AV)
15
30
A
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load per diode
IFSM 250 A
Typical thermal resistance per diode (Note 1) R
θJC
2
o
C/W
Operating junction temperature range TJ -55 to +150
o
C
Storage temperature range TSTG -55 to +150
o
C
2 / 4
Mar-2018-REV.01
SBT30L150CT
SBT30L150FCT
SBT30L150CK
SBT30L150CG
Electrical Characteristics (T
A
=25
o
C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Breakdown voltage per
diode
V
BR
I
R
=0.5mA TJ=25
o
C 150 - - V
Instantaneous forward
voltage per diode
V
F
I
F
=1A
I
F
=5A
I
F
=15A
TJ=25
o
C
-
-
-
0.49
0.68
0.81
-
-
0.87
V
I
F
=1A
I
F
=5A
TJ=125
o
C
-
-
0.4
0.56
-
-
V
Reverse current per
diode
I
R
V
R
=120V TJ=25
o
C - 2.6 - A
V
R
=150V
TJ=25
o
C
TJ=125
o
C
-
-
-
3.1
50
-
A
mA
0
2.5
5
7.5
10
12.5
15
17.5
0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
F
, Forward Current (A)
per diode
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
I
R
, Reverse Current (mA)
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 150°C
Fig.3 Typical Reverse Characteristics
V
F
, Forward Voltage (V )
Fig.4 Typical Forward Characteristics
Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance
1
10
100
1000
10000
1 10 100
C
J
, ( Junction Capacitance pF)
V
R
, Reverse Bias Voltage (V)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
I
F
, Forward Current (A)
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
T
J
= 75°C
per diode
per diode
per diode
Percent of Rated Peak Reverse Voltage (%)