SBT30L120CT
SBT30L120FCT
SBT30L120CK
SBT30L120CG
20A LOW VF SCHOTTKY RECTIFIER
Features
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
Mechanical Data
Case: TO-220AB, ITO-220AB,TO-262AB,TO-263AB
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
1 / 4
Mar-2020-REV.01
Ordering Information
Part No.
Package
Packing
TO-220AB
50pcs / Tube
SBT30L120CT
ITO-220AB
50pcs / Tube
SBT30L120FCT
TO-262AB
50pcs / Tube
SBT30L120CK
TO-263AB
50pcs / Tube
SBT30L120CG
TO-263AB
800pcs / Reel
SBT30L120CG
MAXIMUM RATINGS(TA=25
o
C unless otherwise noted)
Note : 1. Mounted on infinite heatsink.
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current
per diode
per device
I
F(AV)
30
15
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode
I
FSM
250 A
Typical thermal resistance per diode (Note 1)
R
Jc
3
o
C/W
Operating junction temperature range T
J
-55 to + 150
o
C
Storage temperature range T
STG
-55 to + 150
o
C
Maximum rms voltage
V
RMS
84
V
2 / 4
Mar-2020-REV.01
SBT30L120CT
SBT30L120FCT
SBT30L120CK
SBT30L120CG
ELECTRICAL CHARACTERISTICS(TA=25
o
C unless otherwise noted)
RATING AND CHARACTERISTIC CURVES
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Breakdown voltage per
diode
V
BR
I
R
=0.5mA TJ=25
o
C 120
135
- V
Instantaneous forward
voltage per diode
V
F
I
F
=1A
I
F
=5A
I
F
=15A
TJ=25
o
C
-
-
-
0.40
0.54
0.78
-
-
0.85
V
I
F
=1A
I
F
=5A
TJ=125
o
C
-
-
0.38
0.48
-
-
V
Reverse current per
diode
I
R
V
R
=96V TJ=25
o
C - 2 - A
V
R
=120V
TJ=25
o
C
TJ=125
o
C
-
-
-
5
50
-
A
mA
0
2.5
5
7.5
10
12.5
15
17.5
0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
F
, Forward Current (A)
per diode
1
10
100
1000
10000
1 10 100
C
J
, Junction Capacitance (pF)
V
R
, Reverse Bias Voltage (V)
per diode
Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
I
R
, Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 150°C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
I
F
, Forward Current (A)
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
T
J
= 75°C
per diode
per diode
Fig.3 Typical Reverse Characteristics
V
F
, Forward Voltage (V)
Fig.4 Typical Forward Characteristics