SBT20V120CT
SBT20V120FCT
SBT20V120CK
SBT20V120CG
20A LOW VF SCHOTTKY RECTIFIER
Features
• Ultra Low Forward Voltage Drop
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
Mechanical Data
•
Case: TO-220AB, ITO-220AB,TO-262AB,TO-263AB
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
1 / 4
Mar-2018-REV.01
Ordering Information
Part No.
Package
Packing
TO-220AB
50pcs / Tube
SBT20V120CT
ITO-220AB
50pcs / Tube
SBT20V120FCT
TO-262AB
50pcs / Tube
SBT20V120CK
TO-263AB
50pcs / Tube
SBT20V120CG
TO-263AB
800pcs / Reel
SBT20V120CG
MAXIMUM RATINGS(TA=25
o
C unless otherwise noted)
Note : 1. Mounted on infinite heatsink.
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current
per diode
per device
I
F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode
I
FSM
200 A
Typical thermal resistance per diode (Note 1)
R
Jc
10
o
C/W
Operating junction temperature range T
J
-55 to + 150
o
C
Storage temperature range T
STG
-55 to + 150
o
C
Maximum rms voltage
V
RMS
84
V
2 / 4
Mar-2018-REV.01
SBT20V120CT
SBT20V120FCT
SBT20V120CK
SBT20V120CG
ELECTRICAL CHARACTERISTICS(TA=25
o
C unless otherwise noted)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
V
F
, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
T
C
, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
V
R
, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
RATING AND CHARACTERISTIC CURVES
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Breakdown voltage per
diode
V
BR
I
R
=0.5mA TJ=25
o
C 120 - - V
Instantaneous forward
voltage per diode
V
F
I
F
=1A
I
F
=5A
I
F
=10A
TJ=25
o
C
-
-
-
0.48
0.64
0.76
-
-
0.80
V
I
F
=1A
I
F
=5A
TJ=125
o
C
-
-
0.41
0.56
-
-
V
Reverse current per
diode
I
R
V
R
=96V TJ=25
o
C - 2 - A
V
R
=120V
TJ=25
o
C
TJ=125
o
C
-
-
-
2.6
50
-
A
mA
0
2.5
5
7.5
10
12.5
0 25 50 75 100 125 150
I
F
, Forward Current (A)
Per Diode
1
10
100
1000
1 10 100
C
J
, ( Junction Capacitance pF)
Per Diode
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
I
R
, Reverse Current (mA)
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 150°C
Per Diode
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
I
F
, Forward Current (A)
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
T
J
= 75°C
Per Diode