SBT20V100CT
SBT20V100FCT
SBT20V100CK
SBT20V100CG
20A LOW VF SCHOTTKY RECTIFIER
Features
• Ultra Low Forward Voltage Drop
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
Mechanical Data
•
Case: TO-220AB, ITO-220AB,TO-262AB,TO-263AB
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
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May.2015-REV.00
Ordering Information
Part No.
Package
Packing
TO-220AB
50pcs / Tube
SBT20V100CT
ITO-220AB
50pcs / Tube
SBT20V100FCT
TO-262AB
50pcs / Tube
SBT20V100CK
TO-263AB
50pcs / Tube
SBT20V100CG
TO-263AB
800pcs / Reel
SBT20V100CG
MAXIMUM RATINGS(TA=25
o
C unless otherwise noted)
Note : 1. Mounted on infinite heatsink.
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current
per diode
per device
I
F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode I
FSM
200 A
Typical junction capacitance (V
R
=4V, f=1MHz) C
J
620 pF
Typical thermal resistance per diode
(Note 1)
R
JC
11
o
C/W
Operating junction temperature range T
J
-55 to + 150
o
C
Storage temperature range T
STG
-55 to + 150
o
C
Maximum rms voltage
V
RMS
70
V
TO-220
ITO-220
15
TO-262/TO-263
12
2 / 4
May.2015-REV.00
SBT20V100CT
SBT20V100FCT
SBT20V100CK
SBT20V100CG
ELECTRICAL CHARACTERISTICS(TA=25
o
C unless otherwise noted)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
V
F
, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
T
C
, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
V
R
, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
RATING AND CHARACTERISTIC CURVES
PA RAME TE R SYM BOL TE ST CO NDITIONS MIN. TYP. MAX. UNIT
Breakdo wn voltage per di od e V
BR I R=0.5mA 100 - - V
Instantaneo us forward voltage per
diode
V
F
I F=3A
I
F=5A
I
F=10A
T
J=25
o
C
-
-
-
0.46
0.50
0.59
-
-
0.65
V
I
F=3A
I
F=5A
I
F=10A
T
J=125
o
C
-
-
-
0.36
0.43
0.56
-
-
-
V
Reve rse c urrent
per diod e I R
VR=80V
-
10
- A
V
R=100V
T
J=25
o
C
T
J=125
o
C
-
-
-
15
50
-
A
mA
0
5
10
15
0 25 50 75 100 125 150
I
F
, Forward Current (A)
PerPer Di
1
10
100
1000
10000
1 10 100
C
J
, Junction Capacitance (pF)
Per Diode
0.001
0.01
0.1
1
10
100
20 40 60 80 100
I
R
, Reverse Current (mA)
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 150°C
Per Diode
0.1
1
10
100
0 0.2 0.4 0.6 0.8
I
F
, Forward Current (A)
T
J
= 150°C
T
J
= = 125
T
J
= 25°C
T
J
= 75°C
Per Diode