SBT20L150CT
SBT20L150FCT
SBT20L150CK
SBT20L150CG
20A LOW VF SCHOTTKY RECTIFIER
Features
• Ultra Low Forward Voltage Drop
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
Mechanical Data
•
Case: TO-220AB, ITO-220AB,TO-262AB,TO-263AB
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
1 / 4
Mar-2018-REV.01
Ordering Information
Part No.
Package
Packing
TO-220AB
50pcs / Tube
SBT20L150CT
ITO-220AB
50pcs / Tube
SBT20L150FCT
TO-262AB
50pcs / Tube
SBT20L150CK
TO-263AB
50pcs / Tube
SBT20L150CG
TO-263AB
800pcs / Reel
SBT20L150CG
MAXIMUM RATINGS(TA=25
o
C unless otherwise noted)
Note : 1. Mounted on infinite heatsink.
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
150 V
Maximum average forward rectified current
per diode
per device
I
F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode
I
FSM
200 A
Typical thermal resistance per diode (Note 1)
R
Jc
2
o
C/W
Operating junction temperature range T
J
-55 to + 150
o
C
Storage temperature range T
STG
-55 to + 150
o
C
Maximum rms voltage
V
RMS
105
V
2 / 4
Mar-2018-REV.01
SBT20L150CT
SBT20L150FCT
SBT20L150CK
SBT20L150CG
ELECTRICAL CHARACTERISTICS(TA=25
o
C unless otherwise noted)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
V
F
, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
T
C
, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
V
R
, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
RATING AND CHARACTERISTIC CURVES
PARA METER SYMB OL TES T C ONDITIONS MIN. TYP. MA X. UNIT
Breakdown voltage per diode V
BR
I
R
=0.5mA T
J
=25
o
C150 - - V
Instant aneous for w ar d voltage per diode V
F
I
F
=1A
I
F
=5A
I
F
=10A
T
J
=25
o
C
-
-
-
0.50
0.68
0.80
-
-
0.85
V
I
F
=1A
I
F
=5A
T
J
=125
o
C
-
-
0.44
0.59
-
-
V
Reverse cur r ent per diode I
R
-V
R
=105V T
J
=25
o
C 1.5 -
μA
V
R
=150V
T
J
=25
o
C
o
T
J
=125 C
-
-
-
3
50
-
μA
mA
0
2.5
5
7.5
10
12.5
0 25 50 75 100 125 150
I
F
, Forward Current (A)
per diode
1
10
100
1000
110100
C
J
, Junction Capacitance (pF)
per diode
0.0001
0.001
0.01
0.1
1
10
20 30 40 50 60 70 80 90 100
I
R
, Reverse Current (mA)
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 150°C
per diode
0.01
0.1
1
10
100
00.511.5
I
F
, Forward Current (A)
per diode
T
J
= 125°C
T
J
= 150°C
T
J
= 75°C
T
J
= 25°C