Central Semiconductor’s latest Silicon Carbide Schottky rectifier die portfolio is optimized for high temperature applications.
Parametrically, these devices are energy efficient as a result of low total conduction losses and minimal changes to switching
characteristics as a function of temperature.
650V | 4A, 6A, 8A, 10A, 30A
1200V | 2A, 5A, 10A, 50A
Silicon Carbide Schottky Rectier Die
• Power inverters
• Industrial motor drives
• Switch-mode power supplies
• Power factor correction (PFC)
• Over-current protection
Applications
Features
• Positive temperature coefficient
• Low reverse leakage current
• Temperature independent switching
characteristics
• High operating junction temperature
• Metallization suitable for standard die attach
technologies
• Top metallization optimized for wire bonding
RoHS & REACH compliant
SPICE Models and other technical resources:
Visit www.centralsemi.com to download SPICE models for these devices.
RoHS and REACH compliance declarations
Visit the Quality section of Central’s website to access.
SiC
SiLICON
CARBIDE
Central Semiconductor Corp. •
145 Adams Avenue •
Hauppauge,
NY 11788 • USA • www.centralsemi.com
Central Item No.
I
F
(A)
T
A
=25˚C
V
RRM
(V)
T
A
=25˚C
V
F
(V)
TYP
V
F
(V)
MAX
Die Size
(MILS)
Top Metallization
(Å)
Bottom Metallization
(Å)
CPC08-SIC04-650 4.0 650 1.5 1.7 39.4 X 39.4
Al - 50,000
Ti/Ni/Ag -
1,000/2,000/10,000
CPC09-SIC06-650 6.0 650 1.5 1.7 46.5 X 46.5
CPC10-SIC08-650 8.0 650 1.5 1.7 52.8 X 52.8
CPC07-SIC10-650 10 650 1.5 1.7 57.5 X 57.5
CPC15-SIC10-650 10 650 1.5 1.7 57.5 X 57.5 Ni/Au - 15,000/500
CPC11-SIC30-650 30 650 1.5 1.7 94.5 X 94.5 Al - 50,000
Central Item No.
I
F
(A)
T
A
=25˚C
V
RRM
(V)
T
A
=25˚C
V
F
(V)
TYP
V
F
(V)
MAX
Die Size
(MILS)
Top Metallization
(Å)
Bottom Metallization
(Å)
CPC12-SIC02-1200 2.0 1200 1.4 1.6 40.9 X 50.4
Al - 50,000
Ti/Ni/Ag -
1,000/2,000/10,000
CPC05-SIC05-1200 5.0 1200 1.5 1.7 54.3 X 76.8
CPC06-SIC10-1200 10 1200 1.4 1.6 86.6 X 86.6
CPC14-SIC10-1200 10 1200 1.4 1.6 86.6 X 86.6 Ni/Au - 15,000/500
CPC13-SIC50-1200 50 1200 1.5 1.7 179.5 X 179.5 Al - 50,000
650V Devices
1200V Devices
Product Brief
Product Brief
PB SIC BARE DIE FAMILY (R1 0420)
Silicon Carbide Schottky Rectier Die
650V | 4A, 6A, 8A, 10A, 30A
1200V | 2A, 5A, 10A, 50A
Packing Information
Wafer Form
•
100% tested with rejects inked
•
Use - WN suffix when ordering
Anti-Static
Polyethylene Protective Layer
ESD Protective Container
Anti-Static Foam
Anti-Static Foam
Wafer
Anti-Static
Polyethylene Protective Layer
Anti-Static Foam
Anti-Static Foam
ESD Protective Lid
Sawn Wafer
Sawn Wafer
Adhesive Mem brane
Adhesive Mem brane
Metal Frame
Plastic Ring
Sawn Wafer
•
Available on metal frame or plastic ring
•
100% tested with rejects inked.
•
Mounted on adhesive membrane on a metal frame or
plastic ring.
•
Use - WR suffix when ordering for plastic ring.
Chip Form
•
Waffle Packed.
•
Use: -CT, -CM, suffix when ordering.
•
-CT (100% tested with rejects removed).
•
-CM (100% tested and 100% visually inspected per
MIL-STD-750, [method 2072 transistors]
[method 2073 diodes] with rejects removed).
ESD Protective Cover
Anti-Static Polyethylene
Protective Layer
ESD Protective Chip Tray
Note: Metal frame available
by special order only.
Metal frame (- WS suffix) available by special order only.
For more information on Central’s products and potential solutions:
Call us at: 1.631.435.1110
Or view online: www.centralsemi.com/featured-products