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PIN2 D

PIN1 G

PIN3 S

SOT-323

N-Channel MOSFET

2N7002KW

ELECTRONICS CO.,LTD

N-Channel Enhancement Mode MOSFET

HUAXUANYANG HXY

www.hxymos.com

Shenzhen HuaXuanYang Electronics CO.,LTD

D

G

S

Description

The 2N7002KW uses advanced trench technology

to provide excellent R

DS(ON)

, low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

V

DS

= 60V I

D

=0.115A

R

DS(ON)

< 3 Ω@ V

GS

=10 V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)

2N7002KW SOT-323 3000

Absolute Maximum Ratings (T

A

=25℃unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

VDS

60 V

Gate-Source Voltage

VGS

±20 V

Drain Current-Continuous

I

D

0.115 A

Maximum Power Dissipation

P

D

0.2 W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA 625

℃/W

ELECTRONICS CO.,LTD

N-Channel Enhancement Mode MOSFET

HUAXUANYANG HXY

www.hxymos.com

Shenzhen HuaXuanYang Electronics CO.,LTD

Electrical Characteristics (T

A

=25℃unless otherwise noted)

Paramete

r Symbol Test conditions Min Typ Max Unit

Drain

-

So

u

r

ce Bre

akd

o

w

n

V

o

lt

ag

e

V

(BR)DSS

V

GS

=0 V

, I

D

=250 µA

60

Gate

-Threshold Voltage

V

(G

S)th

V

DS

=V

GS

, I

D

=250

µA

1 1.6 2.5

V

Gate-body

Leakage

l

GSS

V

DS

=0 V

, V

GS

=±20 V ±80 nA

Ze

ro Gate Voltage Drain Current

I

DSS

V

DS

=60

V, V

GS

=0

V 80 nA

On-sta

te Drain Current

I

D(on)

V

GS

=

10 V

,

V

DS

=

7

V 500 mA

1.

V

GS

=10

V, I

D

=115

mA

3

3

Drain-

Source On-Resistance R

DS

(on)

V

GS

=4.5V, I

D

=50m

A

2 5

Ω

For

w

a

rd

T

r

a

n

s

c

onduc

t

a

nc

e

g

fs

V

DS

=10

V, I

D

=200m

A

80 500 ms

V

GS

=10V

, I

D

=50

0mA

0.5 3.75 V

Drain-

source on-voltage

V

DS

(on)

V

GS

=5V

, I

D

=50m

A

0.05 0.375 V

Diode

For

w

a

r

d

V

o

l

t

a

g

e

V

SD

I

S

=1

15mA, V

GS

=0 V

0.55 1.2 V

Inp

ut Capacitance

C

iss

50

Outpu

t Capacitance

C

oss

25

Rev

erse Transfer Capacitance

C

rss

V

DS

=25V

, V

GS

=0

V, f=1MHz

5

pF

SWITCHING TIME

Tu

rn-on Time

t

d(on)

20

Tu

rn-off Time

t

d(o

ff)

V

DD

=25

V, R

L

=50

I

D

=500mA,V

GEN

=10

V

R

G

=

25

40

ns

*These p

arameters have no way to verify.

Ω,

Ω

*

*

*

*

*

2N7002KW