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N-Channel MOSFET
DFN5X6-8L
G
S
D
Pin 1
"
S
S
S
G
S
S
S
G
D
D
D
D
General Description
provide low RDS(ON), low gate charge, fast switching
and excellent avalanche characteristics.
This device is specially designed to get better ruggedness
and suitable to use in
Applications
Consumer electronic power supply Motor control
Synchronous-rectification Isolated DC
Synchronous-rectification applications
The BSC070N10NS3G use advanced SGT MOSFET technology to
General Features
V
DS
= 100V I
D
=75A
R
DS(ON)
< 9.2mΩ@ V
GS
=10V
BSC070N10NS3G
ELECTRONICS CO.,LTD
N-SGT Enhancement Mode MOSFET
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Package Marking and Ordering Information
Product ID Pack Marking Qty(PCS)
5000
Absolute Maximum Ratings at T
j
=25℃ unless otherwise noted
Parameter Symbol Value Unit
Drain source voltage VDS 100 V
Gate source voltage VGS ±20 V
Continuous drain current
1)
ID 75 A
Pulsed drain current
2)
ID, pulse 300 A
Power dissipation
3)
P
D
97 W
Single pulsed avalanche energy
5)
EAS 90 mJ
Operation and storage temperature
Tstg，Tj
-55 to 150
℃
Thermal resistance, junction-case RθJC 1.3 °C/W
BSC070N10NS3G
DFN5X6-8L
75N10 XXX YYYYY
Electrical Characteristics (T
J
=25℃ unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristic
V
(BR)DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250μA 100 - - V
I
DSS
Zero Gate Voltage Drain Current V
DS
=100V, V
GS
=0V, - - 1.0 μA
I
GSS
Gate to Body Leakage Current V
DS
=0V, V
GS
= ±20V - - ±100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250μA 1.0 1.6 2.5 V
R
DS(on)
Static Drain-Source on-Resistance
note3
V
GS
=10V, I
D
=20A - 7.3 9.2 mΩ
V
GS
=4.5V, I
D
=8A - 9 13.5 mΩ
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
=50V, V
GS
=0V,
f=1.0MHz
- 2046 - pF
C
oss
Output Capacitance - 865 - pF
C
rss
Reverse Transfer Capacitance - 25 - pF
Q
g
Total Gate Charge
V
DS
=50V, I
D
=30A,
V
GS
=10V
- 39.4 - nC
Q
gs
Gate-Source Charge - 5.2 - nC
Q
gd
Gate-Drain(“Miller”) Charge - 9.8 - nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=50V, I
D
=25A,
R
G
=6Ω, V
GS
=10V
- 20 - ns
t
r
Turn-on Rise Time - 5.2 - ns
t
d(off)
Turn-off Delay Time - 49 - ns
t
f
Turn-off Fall Time - 12 - ns
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward
Current
- - 75 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 300 A
V
SD
Drain to Source Diode Forward
Voltage
V
GS
=0V, I
S
=30A - - 1 V
t
rr
Body Diode Reverse Recovery Time
T
J
=25℃,
I
F
=12A,dI/dt=100A/μs
- 49 - ns
Q
rr
Body Diode Reverse Recovery
Charge
- 85 - nC
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: T
J
=25℃, V
DD
=50V, V
G
=10V, R
G
=25Ω, L=0.5mH, I
AS
=19A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
ELECTRONICS CO.,LTD
N-SGT Enhancement Mode MOSFET
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
BSC070N10NS3G