Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current –5 A
MECHANICAL DATA
•
• Terminals: Solderable per MIL-STD-750, Method 2026
• pprox. Weight : 0.22g / 0.0077oz
Case : SMC
A
FEATURES
For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
•
Page 1 of 3
2017.04
SMC-E-ES5AC~ES5JC-5A600V
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 5 A
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Maximum Average Forward Rectified Current
at T = 100 °C
c
Typical Junction Capacitance
at V =4V, f=1MHz
R
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
T , T
j
stg
50 100 150 200 300 400
600
V
35 70 105 140 210 280 420
V
V
5
120
1
5
100
35
-55 ~ +150
A
A
V
μA
ns
°C
Symbols
Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
25 °C
Absolute Maximum Ratings and Characteristics
Maximum Reverse Recovery Time
t
rr
pF
Units
50 100 150 200 300 400
600
1.25
1.68
Typical Thermal Resistance
R
θJA
R
θJC
35
13
°C/W
.
（2）
（1）Measured with I = 0.5 A, I = 1 A, I = 0.25 A
F R rr
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
（1）
（2）
Maximum DC Reverse Current T = 25 °C
a
at Rated DC Blocking Voltage T =125 °C
a
ES5AC ES5BC ES5CC ES5DC ES5EC ES5GC ES5JC
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Top View
Marking Code: ES5A~ES5J
Simplified outline SMC and symbol
50
1
2
ES5AC THRU ES5JC
Jingdao Microelectronics co.LTD
山 东 晶 导 微 电 子 股 份 有 限 公 司
Page 2 of 3
www.sdjingdao.com
2017.04
Fig.3 Typical Reverse Characteristics
I - Current ( A)
R
Reverse μ
20 10060
0
0.1
1.0
10
% of PIV.VOLTS
100
40 80
300
T =25
J
°C
T =75
J
°C
T =125
J
°C
Fig.4 Typical CharacteristicsForward
2.0 2.5
1.5
0
0.01
0.1
1.0
10
0.5 1.0
0.001
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
T =25
J
°C
ES5JC
ES5EC/ES5GC
ES5AC~ES5DC
50 ohm
Noninductive
25Vdc
approx
+
-
D.U.T
10 ohm
Noninductive
NonInductive
1 ohm
OSCILLOSCOPE
Note 1
PULSE
GENERATOR
Note 2
Note：1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
-0.25
-1.0
0
+0.5
t
rr
10ns/div
Set time Base for 10ns/div
1.0
2.0
3.0
0.0
25 50
75
100 125 150 175
Average Forward Current (A)
Case Temperature (°C)
Fig.2 Maximum Average Forward Current Rating
Junction Capacitance ( pF)
1.0 10 1000.1
1
10
100
Reverse Voltage (V)
T =25
J
°C
Fig.5 Typical Junction Capacitance
T =25
J
°C
f = 1.0MHz
V
sig
= 50mV
p-p
7.0
Single phase half-wave 60 Hz
resistive or inductive load
4.0
5.0
6.0
20
40
60
80
100
00
10 100
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak A)Forward Surage Current (
Number of Cycles
1
120
8.3 ms Single Half Sine Wave
(JEDEC Method)
140
ES5AC THRU ES5JC
Jingdao Microelectronics co.LTD
山 东 晶 导 微 电 子 股 份 有 限 公 司