0
Symbol Rating Unit
V
DS
60 V
V
GS
±20 V
T
J
150 °C
T
STG
-55 to 150 °C
I
S
Tc=25°C 5 A
I
DM
Tc=25°C 20 A
I
D
Tc=25°C 5 A
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
R
θJA
Thermal Resistance Junction-Ambient((*1 in2 Pad of 2-oz Copper), Max.) 200 °C/W
Maximum Power Dissipation W
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Tc=25°C 0.5
Diode Continuous Forward Current
Mounted on Large Heat Sink
Pulse Drain Current Tested
Continuous Drain Current@GS=10V
P
D
D1
S1
D2
Schematic diagram
Marking and pin assignment
SOT-89 top view
Product Summary
V
DS
R
DS(ON)
MAX I
D
MAX
100mΩ@10V
150mΩ@4.5V
60V 5A
Features
• Excellent package for good heat dissipation
• Ultra low gate charge
• Low reverse transfer capacitance
• Fast switching capability
• Avalanche energy specified
Application
• Power switching application
D
G
D
S
05N06Z: Device code
XX: Code
D
G
D
S
XX
05N06Z
SL05N06Z
1
www.slkormicro.com
Symbol Parameter Condition Min Typ Max Unit
BV
(BR)DSS
Drain-Source Breakdown Voltage VGS=0V，ID=250μA 60 -- -- V
I
DSS
Zero Gate Voltage Drain Current VDS=60V，VGS=0V -- -- 1 uA
I
GSS
Gate-Body Leakage Current VGS=±20V，VDS=0V -- -- ±100 nA
V
GS(th)
Gate Threshold Voltage VDS=VGS，ID=250μA 1.1 1.7 2.5 V
VGS=10V， ID=3A -- 58 100
VGS=4.5V，ID=2A -- 70 150
C
ISS
Input Capacitance -- 400 -- pF
C
OSS
Output Capacitance -- 28 -- pF
C
RSS
Reverse Transfer Capacitance -- 23 -- pF
Q
g
Total Gate Charge -- 9 -- nC
Q
gs
Gate Source Charge -- 1 -- nC
Q
gd
Gate Drain Charge -- 2.5 -- nC
t
d(on)
Turn-on Delay Time -- 4 -- nS
t
r
Turn-on Rise Time -- 10 -- nS
t
d(off)
Turn-Off Delay Time -- 12.5 -- nS
t
f
Turn-Off Fall Time -- 1.8 -- nS
VSD
Forward on voltage Tj=25℃，Is=3A， -- 0.8 1.2 V
Switching Characteristics
VDD=30V，ID=3A，
VGS=10V，RG=2.3Ω
Source- Drain Diode Characteristics
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
R
DS(on)
Drain-Source On-State Resistance mΩ
VDS=30V，ID=3A，
VGS=10V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
VDS=30V，VGS=0V， f=1MHz
SL05N06Z
2
www.slkormicro.com