N-Ch 100V Fast Switching MOSFETs
1
Symbol Parameter Rating Units
V
DS
Drain-Source Voltage 100 V
V
GS
Gate-Source Voltage
±20 V
I
D
@T
A
=25℃ Continuous Drain Current, V
GS
@ 10V
1
2 A
I
D
@T
A
=70℃ Continuous Drain Current, V
GS
@ 10V
1
1.2 A
I
DM
Pulsed Drain Current
2
5
A
P
D
@T
A
=25℃ Total Power Dissipation
3
1 W
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Parameter Typ. Max. Unit
R
θJA
Thermal Resistance Junction-ambient
1
--- 125 ℃/W
R
θJC
Thermal Resistance Junction-Case
1
--- 80 ℃/W
BVDSS
RDSON
ID
100V
310mΩ
2 A
The
SL1002B
is the high cell density trenched
N-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The meet the RoHS and Green Product
requirement with full function reliability approved.
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Description
Absolute Maximum Ratings
Thermal Data
SOT23 Pin Configuration
Product Summary
SL1002B
SL1002B
1
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2
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V , I
D
=250uA 100 --- --- V
△BV
DSS
/△T
J
BVDSS Temperature Coefficient Reference to 25℃ , I
D
=1mA --- 0.067 --- V/℃
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V , I
D
=1A --- 260 310
m
V
GS
=4.5V , I
D
=0.5A --- 270 320
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250uA
1.0 1.5 2.5 V
△V
GS(th)
V
GS(th)
Temperature Coefficient --- -4.2 --- mV/℃
I
DSS
Drain-Source Leakage Current V
DS
=80V , V
GS
=0V , T
J
=25℃ --- --- 1 uA
I
DSS
Drain-Source Leakage Current V
DS
=80V , V
GS
=0V , T
J
=25℃ --- --- 5 uA
I
GSS
Gate-Source Leakage Current
V
GS
=±20V , V
DS
=0V
--- --- ±100 nA
gfs Forward Transconductance V
DS
=5V , I
D
=1A --- 2.4 --- S
R
g
Gate Resistance V
DS
=0V , V
GS
=0V , f=1MHz --- 2.8 5.6
Q
g
Total Gate Charge (10V)
V
DS
=80V , V
GS
=10V , I
D
=1A
--- 9.7
13.6
nC
Q
gs
Gate-Source Charge --- 1.6
2.2
Q
gd
Gate-Drain Charge --- 1.7
2.4
T
d(on)
Turn-On Delay Time
V
DD
=50V , V
GS
=10V , R
G
=3.3
I
D
=1A
--- 1.6
3.2
ns
T
r
Rise Time --- 19
34
T
d(off)
Turn-Off Delay Time --- 13.6
27
T
f
Fall Time --- 19
38
C
iss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
--- 508
711
pF
C
oss
Output Capacitance --- 29
41
C
rss
Reverse Transfer Capacitance --- 16.4
23
Symbol Parameter Conditions Min. Typ. Max. Unit
I
S
Continuous Source Current
1,4
V
G
=V
D
=0V , Force Current
--- --- 1.2 A
I
SM
Pulsed Source Current
2,4
--- --- 5 A
V
SD
Diode Forward Voltage
2
V
GS
=0V , I
S
=1A , T
J
=25℃ --- --- 1.2 V
t
rr
Reverse Recovery Time
IF=1A , dI/dt=100A/µs , T
J
=25℃
--- 14 --- nS
Q
rr
Reverse Recovery Charge --- 9.3 --- nC
\
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Electrical Characteristics (T
J
=25 ℃, unless otherwise noted)
Diode Characteristics
SL1002B
2
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