安徽富信半导体科技有限公司

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.

C2383

SOT-89 Bipolar Transistor

双极型三极管

▉Features 特点

NPN High Voltage

高压

▉

Absolute Maximum Ratings

最大额定值

Characteristic 特性参数

Symbol 符号

Rat 额定值

Unit 单位

Collector-Base Voltage 集电极基极电压

V

CBO

160

V

Collector-Emitter Voltage 集电极发射极电压

V

CEO

160

V

Emitter-Base Voltage

发射极基极电压

V

EBO

6

V

Collector Current 集电极电流

I

C

1000

mA

Power dissipation

耗散功率

P

C

(T

a

=25℃)

500

mW

Thermal Resistance Junction-Ambient 热阻

R

Θ

JA

250

℃/W

Junction and Storage Temperature

结温和储藏温度

T

J

,T

stg

-55to+150℃

■

Device Marking

产品打标

H

FE

(1)

60-120(R)

100-200(O)

160-320(Y)

Mark

2383R

2383O

2383Y

安徽富信半导体科技有限公司

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.

C2383

■

Electrical Characteristics

电特性

(T

A

=

25℃ unless otherwise noted

如无特殊说明，温度为

25

℃

)

Characteristic

特性参数

Symbol

符号

Min

最小值

Type

典型值

Max

最大值

Unit

单位

Collector-Base Breakdown Voltage

集电极基极击穿电压(I

C

=100uA，I

E

=0)

BV

CBO

160

—

—

V

Collector-Emitter Breakdown Voltage

集电极发射极击穿电压(I

C

=1mA，I

B

=0)

BV

CEO

160

—

—

V

Emitter-Base Breakdown Voltage

发射极基极击穿电压(I

E

=10uA，I

C

=0)

BV

EBO

6

—

—

V

Collector-Base Leakage Current

集电极基极漏电流

(V

CB

=150V

，

I

E

=0)

I

CBO

—

—

1

µA

Collector-Emitter Leakage Current

集电极发射极漏电流(V

CE

=150V，R

EB

=10MΩ)

I

CER

—

—

10

µA

Emitter-Base Leakage Current

发射极基极漏电流(V

EB

=6V，I

C

=0)

I

EBO

—

—

1

µA

DC Current Gain

直流电流增益(V

CE

=5V，I

C

=200mA)

H

FE

(1)

60

—

320

DC Current Gain

直流电流增益(V

CE

=5V，I

C

=10mA)

H

FE

(2)

40

—

—

Collector-Emitter Saturation Voltage

集电极发射极饱和压降(I

C

=500mA，I

B

=50mA)

V

CE(sat)

—

—

1

V

Base-Emitter Saturation Voltage

基极发射极饱和压降(V

CE

=5V，I

C

=5mA)

V

BE

—

—

0.75

V

Transition Frequency

特征频率

(V

CE

=5V

，

I

C

=200mA)

f

T

20

—

—

MH

Z

Output Capacitance

输出电容

(V

CB

= 5V

，

I

E

=0, f=1MH

Z

)

C

ob

—

12

—

pF