安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
SS8050
■
Electrical Characteristics
电特性
(T
A
=
25℃ unless otherwise noted
如无特殊说明,温度为
25
℃
)
Collector-Base Breakdown Voltage
集电极基极击穿电压
(I
C
=100uA
,
I
E
=0)
Collector-Emitter Breakdown Voltage
集电极发射极击穿电压(I
C
=1mA,I
B
=0)
Emitter-Base Breakdown Voltage
发射极基极击穿电压(I
E
=100uA,I
C
=0)
Collector-Base Leakage Current
集电极基极漏电流
(V
CB
=40V
,
I
E
=0)
Collector-Emitter Punch Throng Current
集电极发射极穿透电流(V
CE
=20V
,
V
BE
=0)
Emitter-Base Leakage Current
发射极基极漏电流
(V
EB
=5V
,
I
C
=0)
DC Current Gain
直流电流增益
(V
CE
=1V
,
I
C
=100mA)
DC Current Gain
直流电流增益(V
CE
=1V,I
C
=800mA)
Collector-Emitter Saturation Voltage
集电极发射极饱和压降
(I
C
=800mA
,
I
B
=80mA)
Base-Emitter Saturation Voltage
基极发射极饱和压降
(I
C
=800mA
,
I
B
=80mA)
Base-Emitter Voltage
基极发射极电压
(V
CE
=1V
,
I
C
=10mA)
Transition Frequency
特征频率(V
CE
=10V,I
C
=50mA)
Output Capacitance
输出电容(V
CB
=10V,I
E
=0, f=1MH
Z
)