1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
Glass Passivated Chip Junction
• Reverse Voltage - 100 to 1000 V
• Forward Current - 1.0 A
• High Surge Current Capability
• Designed for Surface Mount Application
•
MECHANICAL DATA
• Case: UMSB
• Terminals: Solderable per MIL-STD-750, Method 2026
A• pprox. Weight: 0.234g / 0.00825oz
Ratings at 25 ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
°C
Maximum Ratings and Electrical characteristics
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 1.0 A
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Typical Junction Capacitance（Note1）
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
V
V
V
1.0
35
1.1
18
-55 ~ +150
A
A
V
μA
pF
°C
Units
C
j
T , T
j
stg
Symbols
Average Rectified Output Current
100 200 400 600 800 1000
100 200 400 600 800 1000
70 140 280 420 560 700
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
R
5
100
@T =25 °C
A
@T =125 °C
A
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2018.01
UMSB-A-MSB10B~MSB10M-1A1KV
Note:
1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4× × （ × ）copper pad.1.5" 1.5" 3.81 3.81 cm
MSB10B MSB10D MSB10G MSB10J MSB10K MSB10M
Output Cathode（-）
PINNING
PIN
1
2
DESCRIPTION
3
4
Output Anode（+）
Input Pin（~）
Input Pin（~）
4
3
2
1
UMSB Package
+
-
~ ~
（2）
（1）
（3）
（4）
70
15
40
Typical Thermal Resistance（Note2）
R
θJA
R
θJC
R
θJL
°C/W
MSB10B THRU MSB10M
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2018.01
14
28
42
00
10 1001
0.25
0.50
0.75
1.00
0.00
25 50
75
100 125 150 175
Fig.1
Derating Curve
Average Rectified Output Current
Average Rectified Output Current (A)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak A)Forward Surage Current (
Number of Cycles
8.3 ms Single Half Sine Wave
(JEDEC Method)
Fig.2 Typical Reverse Characteristics
0.1
1.0
10
100
20 40 60 80 100 12000 140
percent of Rated Peak Voltage (%)Reverse
Instaneous Current（ A）Reverse μ
T =125
J
°C
T =25
J
°C
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
1.0 10 1000.1
1
10
100
Reverse Voltage (V)
T =25
J
°C
35
21
07
0.5 1.0 1.5 2.00.0
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
0.0
0.01
0.1
1.0
10
Instaneous Forward Voltage (V)
T =25
J
°C
pulse with 300μs
1% duty cycle
Case Temperature (°C)
1.25
49
Resistive or Inductive Load
0.01
100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Transient Thermal Impedance（ /W）°C
t, Pulse Duration（sec）
0.1 1 10
MSB10B THRU MSB10M