0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
Glass Passivated Chip Junction
• Reverse Voltage - 100 to 1000 V
• Forward Current - 0.8 A
• High Surge Current Capability
• Designed for Surface Mount Application
•
MECHANICAL DATA
• Case: ABS/LBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A 88mg 0.0031ozpprox. Weight:
Ratings at 25 ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
°C
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage per element
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance（Note1）
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
ABS1 ABS2 ABS4 ABS6 ABS8 ABS10
V
V
V
0.8
30
1.0
5.0
50
100
13
-55 ~ +150
A
A
V
μA
pF
°C
Maximum Ratings and Electrical characteristics
Units
C
j
T , T
j
stg
Symbols
80
22
Typical Thermal Resistance（Note2）
°C/W
R
θJA
R
θJC
Average Rectified Output Current
at T = 125 ��C
c
100 200
400
600
800
1000
100 200
400
600
800
1000
70
140 280
420
560
700
@T =25 °C
A
@T =100℃
A
@T =125 °C
A
@I = 0.4A
F
@I =0.8A
F
1.1
Page 1 of 3
2016.01
ABS/LBF Package
PINNING
PIN
1
2
DESCRIPTION
3
4
Output Cathode（-）
Output Anode（+）
Input Pin（~）
Input Pin（~）
1
2
3
4
ABS-A-ABS1~ABS10-0.8A1KV
Note:
1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4× × （ × ）copper pad.1.5" 1.5" 3.81 3.81 cm
ABS1 THRU ABS10
Jingdao Microelectronics co.LTD
山 东 晶 导 微 电 子 股 份 有 限 公 司
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2016.01
10
20
30
00
10 1001
40
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak A)Forward Surage Current (
Number of Cycles
8.3 ms Single Half Sine Wave
(JEDEC Method)
Fig.2 Typical Reverse Characteristics
0.1
1.0
10
100
20 40 60 80 100 12000 140
percent of Rated Peak Voltage (%)Reverse
Instaneous Current（ A）Reverse μ
T =125
J
°C
T =25
J
°C
0.2
0.4
0.6
0.8
1.0
0.0
25 50
75
100 125 150 175
Fig.1
Derating Curve
Average Rectified Output Current
Average Rectified Output Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1.2
0.5 1.0 1.5 2.00.0
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
0.0
0.01
0.1
1.0
10
Instaneous Forward Voltage (V)
T =25
J
°C
pulse with 300μs
1% duty cycle
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
1.0 10 1000.1
1
10
100
Reverse Voltage (V)
T =25
J
°C
ABS1 THRU ABS10
Jingdao Microelectronics co.LTD
山 东 晶 导 微 电 子 股 份 有 限 公 司