2SA1213-Y
1 / 6
COMPLIANT
RoHS
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S5386
Rev. 1.0, 28-Aug-23
www.21yangjie.com
Item
Symbol Unit Conditions Value
Device marking code
NY
Collector-base voltage V
CBO
V I
C
=-100uA, I
E
=0 -50
Collector-emitter voltage V
CEO
V I
C
=-10mA, I
B
=0 -50
Emitter-base voltage V
EBO
V I
E
=-100uA, I
C
=0 -5
Collector current I
C
A -2
Power dissipation
P
D
mW 500
Junction temperature T
J
℃
-55 to +150
Storage temperature T
STG
℃
-55 to +150
PNP General Purpose Amplifier
Features
Moisture sensitivity level 1
Halogen free and RoHS compliant
Surface mount package ideally suited for auto
matic insertion
Mechanical data
Package： SOT-89
Terminals：Tin plated leads, solderable per
J-STD-002 and JESD22-B102
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified)
Application
Signal amplification
Switching circuit
2SA1213-Y
2 / 6
COMPLIANT
RoHS
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S5386
Rev. 1.0, 28-Aug-23
www.21yangjie.com
Item
Symbol Unit Conditions
Min Typ Max
Collector-base breakdown voltage V
(BR)CBO
V
I
C
=-100uA, I
E
=0
-50
Collector-emitter breakdown voltage V
(BR)CEO
V
I
C
=-10mA, I
B
=0
-50
Emitter-base breakdown voltage V
(BR)EBO
V
I
E
=-100uA, I
C
=0
-5
Collector-base cut-off current I
CBO
uA V
CB
=-50V
-0.1
Emitter-base cut-off current I
EBO
uA V
EB
=-5V
-0.1
DC current gain
h
FE1
I
C
=-0.5A V
CE
=-2V 120 240
h
FE2
I
C
=-2A V
CE
=-2V 20
Collector-emitter saturation voltage V
CE(sat)
V
I
C
=-1A
I
B
=-50mA
-0.5
Base-emitter saturation voltage V
BE(sat)
V
I
C
=-1A
I
B
=-50mA
-1.2
Transition frequency f
T
MHz V
CE
=-5V,I
C
=-50mA 50
Collector-base output capacitance Cob pF V
CB
=-10V,I
E
=0, f=1MHz
20
Parameter Symbol Unit Value
Thermal resistance, junction-to-ambient
R
θJ-A
(1)
℃/W
250
Thermal resistance, junction-to-case
R
θJ-C
(1)
℃/W
200
■
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
■ Thermal Characteristics
Note:
（1）Device mounted on PCB, single-sided copper，with standard footprint