YBSA20005 THRU YBSA2010
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B3159
Rev.1.0,02-Sep-23
www.21yangjie.com
Bridge Rectifiers
Features
● UL recognition, file #E313149
● Glass passivated chip junction
● Ideal for automated placement
● High surge current capability
● Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Typical Applications
General purpose use in AC/DC bridge full wave rectification for
SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Mechanical Data
●
P
ackage: YBS2G
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, Halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
As marked on body
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER
SYMBOL
UNIT
YBSA20005
YBSA2002
YBSA2004
YBSA2006
YBSA2008
YBSA2010
Device marking code
YBSA20005
YBSA2002
YBSA2004
YBSA2006
YBSA2008
YBSA2010
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
50
200
400
600
800
1000
Maximum RMS Voltage
V
RMS
V
35
140
280
420
560
700
Maximum DC blocking Voltage
V
DC
V
50
200
400
600
800
1000
Average rectified output current
@60Hz sine wave, R-load, Tc=120℃
I
O
A
2
Forward Surge Current (Non-repetitive)
@8.3ms Half-sine wave,1 cycle, Tj=25℃
I
FSM
A
80
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃
160
Current squared time
@1ms≤t≤8.3ms Tj=25℃，Rating of per
diode
I
2
t
A
2
s
26.6
Storage temperature
T
stg
℃
-55 ~ +150
Junction temperature
T
j
℃
-55 ~ +150
■Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER
SYMBOL
UNIT
TEST
CONDITIONS
YBSA20005
YBSA2001
YBSA2002
YBSA2004
YBSA2006
YBSA2008
YBSA2010
Maximum instantaneous
forward voltage drop per
diode
V
F
V
I
FM
=1.0A
1.0
Maximum DC reverse current
at rated DC blocking voltage
per diode
I
R
μA
T
j
=25℃
5
Tj =125℃
100
Typical junction capacitance
Cj
pF
Measured at 1MHz
and Applied
Reverse Voltage of
4.0 V.D.C
26
COMPLIANT
RoHS
YBSA20005 THRU YBSA2010
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B3159
Rev.1.0,02-Sep-23
www.21yangjie.com
■
Thermal Characteristics （T
a
=25℃ Unless otherwise specified）
PARAMETER
SYMBOL
UNIT
YBSA20005
YBSA2001
YBSA2002
YBSA2004
YBSA2006
YBSA2008
YBSA2010
Typical
Thermal
Resistance
Between Junction and Ambient
R
θJ-A
℃/W
50
Between Junction and Lead
R
θJ-L
11
Between Junction and Case
R
θJ-C
7
Note: Device mounted on P.C.B with 35mm*25mm*1.7mm.
■
Characteristics (Typical)
80
0
0.4
FIG1:Io-Tc Curve
16090 100 110 120 130 140 150
0.8
1.2
1.6
2.0
2.4
Case Temperature（℃）
Average Forward Output(A)
1
0
2
5
10 20 50 100
40
80
120
non-repetitive
Tj=25℃
FIG2:Surge Forward Current Capability
0
8.3ms
IFSM
8.3ms
Peak Forward Surge Current(A)
Number of Cycles
half sine wave
1cycle
1.6
0.6 0.8 1.0 1.2 1.4
0.1
0.2
0.5
FIG3: Typical Forward Voltage
1.0
10
20
40
60
5.0
Instantaneous Forward Voltage(V)
Instantaneous Forward Current(A)
0 20 40 60 80 100
0.01
0.1
1.0
10
100
Tj=125℃
Tj=25℃
FIG4:Typical Reverse Characteristics
Instantaneous Reverse Current (uA)
Percent of Rated Peak Reverse Voltage (%)