CPDWL5V0ACP-HF
SMD ESD Protection Diode
Features
- Low leakage.
- Working voltage: 5V.
- High component density.
- Low clamping voltage.
RoHS Device
Halogen Free
Ultra small SMD package
Comchip Technology CO., LTD.
REV:A
Page 1
- Bi-directional ESD protection.
- Surface mount package.
Case 01005B
Outline
Circuit Diagram
1 2
Part number Package Reel Reel size Marking code
CPDWL5V0ACP-HF
01005B
10,000 7 inch C
Mechanical data
- Case: 01005 package, molded plastic.
- Mounting position: Any.
- High ESD protection level.
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Min
Max Unit
Conditions
Breakdown voltage
VBR V
IR = 1mA
Reverse leakage current
IR
Clamping voltage
VC
V
V
Working peak reverse voltage
VRWM
Junction capacitance
CJ
pF
VR = 0V, f = 1MHz
12
6
5
100 nA
25
0.42
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter Value
Unit
Conditions
Peak pulse power
PPP W
108
Peak pulse current
IPP A
TP = 8/20µs
4
TP = 8/20µs
Tj
°C
Storage temperature range
TSTG
-55 to +150
°C
-40 to +125
ESD capability
IEC 61000-4-2(air)
ICE 61000-4-2(contact)
ESD
±18
kV
Operating temperature range
1
±14
VR = 5V
IPP = 1V, TP = 8/20µs
IPP = 4V, TP = 8/20µs
QW-G7139
14
27
Typical Rating and Characteristic Curves (CPDWL5V0ACP-HF)
Comchip Technology CO., LTD.
Page 2
SMD ESD Protection Diode
1 2
0
Fig.3 - Typical Clamping Voltage vs.
Peak Pulse Current
Peak Pulse Current, (A)
Clamping Voltage, (V)
Mounting on glass epoxy PCBs
0 25 50 75 100 125
0
20
40
60
80
100
120
Fig.2 - Power Rating Derating Curve
Ambient Temperature, (°C)
Power Rating, (%)
Fig.1 - 8/20µs Peak Pulse Current
Waveform Acc. IEC 61000-4-5
0 10 15 20 25 305
Time, (µs)
td= t
Ipp/2
e
-t
Percentage of Ipp
0%
20%
40%
60%
80%
100%
120%
Test Waveform
parameters
tf=8µs
td=20µs
Ta=25°C
Peak Value Ipp
10
20
43
150
15
30
0
5
Fig.4 - Typical Capacitance Between
Terminals Characteristics
Reverse Voltage, (V)
Capacitance Between Terminals, (pF)
2
0.2
0.6
0.4
1.0
1 3
0
f=1MHz
TA=25°C
8/20µs waveform
0.8
5
4
REV:A
QW-G7139
25