DIF120SIC053
DIF120SIC053
Silicon Carbide (SiC) MOSFET
Siliziumkarbid (SiC) MOSFET
I
D
= 52 A
R
DS(on)
< 53 mΩ
T
jmax
= 175°C
V
DSS
= 1200 V
P
D
= 278 W
Version 2023-09-15
TO-247-4L
SPICE Model & STEP File
1
)
Marking
Type / Typ
HS Code 85412900
Typical Applications
EV Charging Stations
Solar Inverter
Battery Charger
Power Supplies
Commercial / industrial grade
Suffix -Q: AEC-Q101 compliant
1
)
Suffix -AQ: in AEC-Q101 qualification
1
)
Typische Anwendungen
Ladestationen für E-Fahrzeuge
Solar-Wechselrichter
Batterieladegeräte
Stromversorgungen
Standardausführung
Suffix -Q: AEC-Q101 konform
1
)
Suffix -AQ: in AEC-Q101 Qualifikation
1
)
Features
SiC Wide Bandgap Material
Kelvin source for fast switching
Low on state resistance
Fast switching times
Low gate charge
Compliant to RoHS (examp. 7a),
REACH, Conflict Minerals
1
)
Besonderheiten
SiC Material mit großem Bandabstand
Kelvin-Source für schnelles Schalten
Niedriger Einschaltwiderstand
Schnelle Schaltzeiten
Niedrige Gate-Ladung
Konform zu RoHS (Ausn. 7a),
REACH, Konfliktmineralien
1
)
Mechanical Data
1
) Mechanische Daten
1
)
Packed in tubes/cardboards 30/450 Verpackt in Stangen/Kartons
Weight approx. 6 g Gewicht ca.
Case material UL 94V-0 Gehäusematerial
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL N/A
Maximum ratings
1
) Grenzwerte
2
)
DIF120SIC053/-AQ
Drain-Source voltage
Drain-Source-Spannung
V
GS
= 0 V (short) V
DSS
1200 V
Gate-Source-voltage
Gate-Source-Spannung
AC, <1% duty cycle
recommended
V
GSS
-8 V to 22 V
-4 V to 18 V
Recommended operating Gate-Source-voltage
Empfohlene Gate-Source-Betriebsspannung
Turn-on
Turn-off
V
GS(on)
V
GS(off)
15 V
0 V
Power dissipation – Verlustleistung T
C
= 25°C
2
) P
tot
278 W
Drain current continous
Drainstrom dauernd
T
C
= 25°C
3
)
T
C
= 100°C
3
)
I
D
65 A
46 A
Peak Drain current – Drain-Spitzenstrom
3
) I
DM
100 A
Source current continous
Sourcestrom dauernd
T
C
= 25°C
3
) I
S
50 A
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
-55…+175°C
-55...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
1 T
A
= 25°C, unless otherwise specified – T
A
= 25°C, wenn nicht anders angegeben
2 Measured at heat flange – Gemessen an der Kühlfahne
3 Pulse width refer to SOA diagram – Pulsbreite siehe SOA-Diagramm
© Diotec Semiconductor AG http://www.diotec.com/ 1
G (4)
(1)
S
1
D
(2)
S (3)
2
Pb
E
L
V
W
E
E
E
R
o
H
S
Halogen
FREE
1
2
3
4
DIF120SIC053
Characteristics (static) Kennwerte (statisch)
T
j
= 25°C Min. Typ. Max.
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
I
D
= 100 µA V
GS
= 0 V (short) V
(BR)DSS
1200 V – –
Drain-Source leakage current – Drain-Source Leckstrom
V
DS
= V
DSS
V
GS
= 0 V (short) I
DSS
– 1 µA 100 µA
Gate-Body leakage current – Gate-Substrat Leckstrom
V
GS
= 18 V V
DS
= 0 V (short) I
GSS
– – 250 nA
Gate-Source threshold voltage – Gate-Source Schwellspannung
V
GS
= V
DS
I
D
= 9.5 mA T
j
= 25°C
V
GS
= V
DS
I
D
= 9.5 mA T
j
= 175°C
V
GS(th)
1.9 V
–
2.6 V
1.8 V
4 V
–
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
V
GS
= 18 V I
D
= 33 A T
j
= 25°C
V
GS
= 18 V I
D
= 33 A T
j
= 175°C
R
DS(on)
–
40 mΩ
65 mΩ
53 mΩ
–
Characteristics (dynamic) Kennwerte (dynamisch)
T
j
= 25°C Min. Typ. Max.
Forward Transconductance – Übertragungssteilheit
V
DS
= 20 V I
D
= 33 A g
FS
– 21 S –
Input Capacitance – Eingangskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
iss
– 2070 pF –
Output Capacitance – Ausgangskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
oss
– 112 pF –
Reverse Transfer Capacitance – Rückwirkungskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
rss
– 11 pF –
Stored Energy – Gespeicherte Energie
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV E
oss
– 66 µJ –
Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit
V
DD
= 800 V I
D
= 20 A V
GS
= -4/18 V R
L
= 20 mΩ R
G
= 2 Ω
t
d(on)
t
r
–
17 ns
58 ns
–
Turn-Off Delay Time & Fall Time – Ausschaltverzögerung und Abfallzeit
V
DD
= 800 V I
D
= 20 A V
GS
= -4/18 V R
L
= 20 mΩ R
G
= 2 Ω
t
d(off)
t
f
–
26 ns
15 ns
–
Switching Energy – Schaltenergie
V
DD
= 800 V I
D
= 20 A V
GS
= -4/18 V R
L
= 20 mΩ R
G
= 2 Ω
E
on
E
off
E
total
–
1.41 mJ
0.75 mJ
2.16 mJ
–
Total Gate Charge – Gesamte Gate-Ladung
V
DD
= 800 V I
D
= 20 A V
GS
= 0/15 V Q
g
– 121 nC –
Gate-Source Charge – Gate-Source-Ladung
V
DD
= 800 V I
D
= 20 A V
GS
= 0/15 V Q
gs
– 34 nC –
Gate-Drain Charge – Gate-Drain-Ladung
V
DD
= 800 V I
D
= 20 A V
GS
= 0/15 V Q
gd
– 20 nC –
Intrinsic Gate resistance – Innerer Gatewiderstand
f = 1 Mhz V
AC
= 25 mV R
Gi
– 4.9 Ω –
2 http://www.diotec.com/ © Diotec Semiconductor AG