NPN Silicon Epitaxial Planar Transistor
SS8050S
1 of 2
REV.08
1．BASE
SOT-23
2．EMITTER
3．COLLECTOR
Symbol Paramete
r
Val
ue
Units
V
CBO
Collector-Bas
e Voltage
V
V
CEO
Collector-Emitter Vo
ltage
V
V
EBO
Emitter-Base Vo
ltage
5
V
I
C
Collector Curr
ent -Continuous
mA
P
C
Collector Po
wer Dissipation
mW
T
j
Junction
Temperature
150
℃
T
stg
S t
orage Temperature
-55-15
0
℃
ELECTRICAL CHARACTERISTICS (T
amb=25℃ unless otherwise specified)
Paramete
r
Symbol
Te
conditionsst
MIN
TYP
MAX
UNIT
Collecto
r-base breakdown voltage
V
(BR)CB
O
I
E
=0
V
Collecto
r-emitter breakdown voltage
V
(BR)CE
O
I
C
= 1
mA, I
B
=0
V
Emitter-ba
se breakdown voltage
V
(BR
)EBO
5
V
Collecto
r cut-off current
I
CB
O
µA
Emitter cut-off current
I
EBO
0.1
µA
DC curr
ent gain
Collecto
r-emitter saturation voltage
V
CE
(sat)
0.5
V
Base
-emitter saturation voltage
V
BE
(sat)
V
Tr
ansition frequency
f
T
MHz
MARKING:
Y1
MAXIMUM RATINGS (T
A
=25℃
unless otherwise noted)
For switching and amplifier applications.
Especially
suitable for AF-driver stages and
low power output
stages.
40
25
1000
1000
40
I
C
=
0.1mA,
I
E
=0.1m
A
,
I
C
=0
V
CB
=35V,
I
E
=0
V
EB
=
4V,
I
C
=0
h
FE
V
CE
=1V,
I
C
= 100mA
I
C
=800mA,
I
B
= 80mA
I
C
=800mA,
I
B
= 80mA
V
CE
=6V,
I
C
= 20mA
f=
30MHz
25
0.1
85 400
1.2
150
1
2
3
