SOT-23 Plastic-Encapsulate NPN Transistors

1. Features

⚫ Complementary to S9012S

⚫ Power dissipation of 300mW

⚫ High stability and high

reliability

2. Mechanical Data

⚫ SOT-23 Small Outline Plastic Package

⚫ Epoxy UL: 94V-0

⚫ Mounting Position: Any

Pin configuration

Pin Function Outline

1 Base

3

1

2

J3

2 Emitter

3 Collector

Specification

Absolute Maximum Rating & Thermal Characteristics

Ratings at 25 ℃ ambient temperature unless otherwise specified.

Parameters Symbol Value Unit

Collector-Base Voltage V

CBO

40 V

Collector-Emitter Voltage V

CEO

30 V

Emitter-Base Voltage V

EBO

6 V

Collector Current-Continuous I

C

500 mA

Collector Power Dissipation P

C

300 mW

Junction Temperature T

j

150 ℃

Storage Temperature T

STG

-55~150 ℃

Thermal resistance From junction to ambient R

θJA

416 ℃/W

REV.08

1 of 4

S9013S

SOT-23

Electrical Characteristics(At TA = 25℃ unless otherwise specified)

Parameters

Symbols

Test Condition

Limits

Min

Typ

Max

Unit

Collector-base breakdown voltage

V

(BR)CBO

I

C

=50uA, I

E

=0 70

V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

=1mA, I

B

=0 30

V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=50uA, I

C

=0 6

V

Collector cut-off current

I

CEO

V

CE

=20V, I

B

=0 100

nA

I

CBO

V

CB

=40V, I

E

=0 100

Emitter cut-off current

I

EBO

V

EB

=5V, I

C

=0 100

nA

DC current gain

h

FE

V

CE

=1V, I

C

=50mA 85

400

Collector-emitter saturation voltage

V

CE(sat)

I

C

=500mA, I

B

=50mA 0.60

V

Base -emitter saturation voltage

V

BE(sat)

I

C

=500mA, I

B

=50mA 1.20

V

Transition frequency

f

T

V

CE

=6V, I

C

=20mA,

f=30MHz

150

MHz

Collector output capacitance

C

OB

V

CB

=10V, IE=0, f=1MHz

5

pF

Classification of h

FE

Rank

L

H

J

Range

120~200

200~350

300~400

REV.08

2 of 4

S9012S