Features
•
1.8kVSchottkyRectier
•
ZeroReverseRecoveryCurrent
•
High-FrequencyOperation
•
Temperature-IndependentSwitching
•
ExtremelyFastSwitching
•
PositiveTemperatureCoefcientonV
F
•
IncreasedCreepage/ClearanceDistance
Benets
•
ReplaceBipolarwithUnipolarRectiers
•
EssentiallyNoSwitchingLosses
•
HigherEfciency
•
ReductionofHeatSinkRequirements
•
ParallelDevicesWithoutThermalRunaway
Applications
•
SwitchModePowerSupplies(SMPS)
•
BoostdiodesinPFCorDC/DCstages
•
FreeWheelingDiodesinInverterstages
•
AC/DCconverters

Part Number Package
TO-247-2
PIN1
PIN2
CASE
1
©
Copyright 2018 APSemi(Shenzhen)Co.,Ltd All rights reserved.
APSemi(Shenzhen)Co.,Ltd
无锡国晶微半导体技术有限公司
GC3D50170
GC3D50170H Rev. -, 02-2018
H
Silicon Carbide Schottky Diode
AC3D50170H
Continuous f or ward curr ent ( T
c
=145°C)
*1 Limited by T
j
*2 Assumes Z
th(j-a)
of 0. 16 °C/ W or less. (Pulse Width = 8.3ms)
Absolute Maximum Ratings (T
j
= 25°C )
Parameter Symbol Value Unit
Reverse voltage (repetitive peak )
V
RM
1800 V
Reverse voltage ( DC)
V
R
1800 V
A
Surge non-
repetitive forward
current
PW=10ms sinusoidal, T
j
=25°C
I
FSM
150 A
PW=10ms sinusoidal, T
j
=150°C
110 A
PW=10s square, T
j
=25°C
630 A
I
F
50
120
i
2
t value
1≦PW≦10ms, T
j
=25°C
∫
i
2
dt
A
2
s
1≦PW≦10ms, T
j
=150°C
60
A
2
s
Range of storage temper at ur e
T
stg
55 to 175
°C
175Junction temperat ur e
T
j
°C
*
2
*
2
*
1
Package

TO-247-2
V
RRM
I
F
(
T
C
=135˚C)
Q
c
Parameter Rating Units
V
A**
nC**
1800
50
158
Silicon Carbide Schottk
y
Diode
1
©
Copyright 2018 APSemi(Shenzhen)Co.,Ltd All rights reserved.
AC3D50170H
Rev. - , 02-2018
AC
3D50170H
2
©
Copyright 2018 APSemi(Shenzhen)Co.,Ltd All rights reserved.
APSemi(Shenzhen)Co.,Ltd
无锡国晶微半导体技术有限公司
Silicon Carbide Schottky Diode
Electrical characteristics (T
j
= 25°C)
Unit
Min. Typ. Max.
DC blocking voltage
V
DC
I
R
=0.3mA
1700 - - V
Parameter Symbol Conditions
Values
1.95 V
I
F
=50A,T
j
=150°C
- 2.5 - VForward voltage
V
F
I
F
=50A,T
j
=25°C
- 1.65
I
F
=50A,T
j
=175°C
- 2.8 - V
Reverse current
I
R
V
R
=1800V,T
j
=25°C
- 5 300
A
V
R
=1800V,T
j
=150°C
- 110 -
A
V
R
=1800V,T
j
=175°C
-
-pF
250 -
A
-pF
Total capacitance C
V
R
=1V,f=1MHz
- 3100
V
R
=1800V,f=1MHz
- 170
-nC
Switching time
t
C
V
R
=800V,di/dt=500A/s
-39-ns
Total capacitive charge
Q
C
V
R
=800V,di/dt=500A/s
- 158
Electrical characteristic curves
　
Fig.1 V
F
-I
F
Characteristics
Forward Current : I
F
[A]
Forward Voltage : V
F
[V]
Fig.2 V
F
-I
F
Characteristics
Forward Current : I
F
[A]
Forward Voltage : V
F
[V]
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
Pulsed
T
a
=125ºC
T
a
=175ºC
T
a
=75ºC
T
a
=25ºC
T
a
= 25ºC
0
10
20
30
40
50
60
70
0.0 1.0 2.0 3.0 4.0
Pulsed
T
a
=125ºC
T
a
=175ºC
T
a
=75ºC
T
a
=25ºC
T
a
= 25ºC
GC3D50170
GC3D50170H Rev. -, 02-2018
H
Silicon Carbide Schottky Diode
Silicon Carbide Schottk
y
Diode
2
©
Copyright 2018 APSemi(Shenzhen)Co.,Ltd All rights reserved.
AC3D50170H
Rev. - , 02-2018
AC
3D50170H