Features
•
1700-Volt Schottky Rectier
•
Zero Reverse Recovery Current
•
Zero Forward Recovery Voltage
•
High-Frequency Operation
•
Temperature-Independent Switching Behavior
•
Extremely Fast Switching
•
Halogen-Free; RoHS Complaint
Benets
•
Replace Bipolar with Unipolar Rectiers
•
Essentially No Switching Losses
•
Higher Efciency
•
Reduction of Heat Sink Requirements
•
Parallel Devices Without Thermal Runaway
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
Repetitive Peak Reverse Voltage 1700 V
V
RSM
Surge Peak Reverse Voltage 1700 V
V
DC
DC Blocking Voltage 1700 V
I
F
Continuous Forward Current 26.3 A T
C
<135˚C
I
FRM
Repetitive Peak Forward Surge Current
99
57
A
T
C
=25˚C, t
P
=10 ms, Half Sine Wave, D=1
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=1
I
FSM
Non-Repetitive Peak Forward Surge
Current
117
88
A
T
C
=25˚C, t
P
=10ms, Half Sine Wave, D=1
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=1
P
tot
Power Dissipation
377
163
W
T
C
=25˚C
T
C
=110˚C
T
c
Maximum Case Temperature 135 ˚C
T
J
Operating Junction Range
-55 to
+175
˚C
T
stg
Storage Temperature Range
-55 to
+135
˚C
TO-247 Mounting Torque
1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
Part Number Package Marking
TO-247-2
PIN 1
PIN 2
CASE
AC
3D25170H
AC
3D25170H
APSemi(Shenzhen)Co.,Ltd
无锡国晶微半导体技术有限公司
GC3D25170H
Silicon Carbide Schottky Diode
Applications
•
SwitchModePowerSupplies(SMPS)
•
BoostdiodesinPFCorDC/DCstages
•
FreeWheelingDiodesinInverterstages
•
AC/DCconverters
Package

TO-247-2
V
RRM
I
F
(
T
C
=135˚C)
Q
c
Parameter Rating Units
V
A**
nC**
1700
26.3
230
Silicon Carbide Schottk
y
Diode
1
©
Copyright 2019 APSemi(Shenzhen)Co.,Ltd All rights reserved.
AC3D25170H
Rev. B, 10-2019
AC
3D25170H
0
5
10
15
20
25
30
35
40
45
50
0 1 2 3 4 5 6 7
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
Forward Voltage
1.8
3.2
2.5
4
V
I
F
= 25 A T
J
=25°C
I
F
= 25 A T
J
=175°C
I
R
Reverse Current
20
100
100
400
μA
V
R
= 1700 V T
J
=25°C
V
R
= 1700 V T
J
=175°C
Q
C
Total Capacitive Charge 230 nC
V
R
= 1700 V, I
F
= 25 A
di/dt = 200 A/μs
T
J
= 25°C
C Total Capacitance
2079
187.5
97
pF
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 800 V, T
J
= 25˚C, f = 1 MHz
Note:
1.
This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
Thermal Resistance from Junction to Case 0.4 °C/W
Typical Performance
Figure 1. Forward Characteristics
0
1
2
3
4
5
6
7
8
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Figure 2. Reverse Characteristics
I
F
(A)
V
F
(V)
I
R
(μA)
V
R
(V)
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C
APSemi(Shenzhen)Co.,Ltd
无锡国晶微半导体技术有限公司
GC3D25170H
Silicon Carbide Schottky Diode
Silicon Carbide Schottk
y
Diode
2
©
Copyright 2019 APSemi(Shenzhen)Co.,Ltd All rights reserved.
AC3D25170H
Rev. B, 10-2019
AC
3D25170H