N - Channel MOSFET

◇

Epoxy meets UL 94 V-0 flammability rating

◇

High density cell design for low RDS(ON)

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Voltage controlled small signal switch

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High Saturation Current Capability

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ESD Protected

Device Marking Code

2N7002KDW

K27

Maximum Ratings （Ta = 25 ℃）

Symbol Parameter Value Units

VDS

Drain-source Voltage 60 V

VGS

Gate-source-Voltage ±20 V

ID

Drain Current 340 mA

Pd Total Power Dissipation 150. mW

TJ

Junction Temperature 150 ℃

TSTG. Storage Temperature -55 to 150 ℃

Rθ JA Thermal Resistance from Junction to Ambient 820 ℃/W

ELECTRICAL CHARACTERISTICS （Ta = 25 ℃）

Symbol Parameter Conditions Min Typ Max Units

V

(BR)Dss

Drain-source Breakdown Voltage

V

GS

=0V,I

D

= 250 uA

60

V

V

GS(th)

Gate-Threshold Voltage (note 1)

V

DS

=VGS, I

D

= 1mA

1.0

2.5

V

I

GSS

Gate-body Leakage

V

DS

=0V, V

GS

=±20V

±10

uA

Id

SS

Zero Gate Voltage Drain Current

V

DS

=48V, V

GS

=0V

1

uA

Rdson Drain-source On-resistance (note 1)

V

GS

=4.5V, I

D

=200mA

V

GS

=10V, I

D

=500mA

5.3

5.0

Ω

Vsd Diode Forward Voltage (note 1)

V

GS

=0V, I

S

= 300mA

1.5

V

Qr Recovered charge

V

GS

=0V, I

S

= 300mA

VR=25V,dls/dt=-100A/µS

30 nC

2N7002KDW

1

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Dynamic Characteristics

Ciss Input Capacitance

VDS=10V

VGS=0V

F=1MHz

40

pF

Coss Output Capacitance

30

Crss Reverse Transfer Capacitance

10

Switching Characterisics

Symbol Parameter Conditions Min Typ Max Units

Td(on) Turn on delay time VDD=50V,VGS=10V,RL=250Ω

RGS=50Ω ,RGEN=50Ω

10

ns

Td(off) Turn off delay time

15

trr Reverse recovery time

VGS=0V, I

S

=300mA,VR=25V

Dls/dt=-100A/us

30

Gate – Source Zener Diode

BV

GSO

Gate-Source Breakdown Voltage

I

GS

=±1mA(Open Drain)

±21.5

±30

V

Note:

1. Pulse Test : Pulse width ≤300µS,duty cycle ≤2%.

2N7002KDW

2

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