ASC30N1200MT3
1
1200V N-Channel MOSFET
Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size.
Features
⚫ High Speed Switching with Low Capacitances
⚫ High Blocking Voltage with Low RDS(on)
⚫ Easy to parallel and simple to drive
⚫ ROHS Compliant, Halogen free
Application
⚫ EV Charging
⚫ High Voltage DC/DC Converters
⚫ Switch Mode Power Supplies
⚫ Power Factor Correction Modules
Ordering Information
Part Number
Marking
Package
Packaging
ASC30N1200MT3
ASC30N1200MT3
TO-247-3
Tube
ASC30N1200MT3
2
Absolute Maximum Ratings(Tc=25℃)
Symbol
Parameter
Value
Unit
V
DS
Drain-Source Voltage
1200
V
I
D
Drain Current(continuous)at Tc=25℃
32
A
I
D
Drain Current(continuous)at Tc=100℃
23
A
I
DM
Drain Current (pulsed)
80
A
V
GS
Gate-Source Voltage
-10/+22
V
P
D
Power Dissipation T
C
= 25°C
175
W
T
J,
Tstg
Junction and Storage Temperature Range
-55 to +175
℃
Electrical Characteristics(TJ = 25℃ unless otherwise specified)
Typical Performance-Static
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DS
Drain-source Breakdown Voltage
I
D
=250uA,V
GS
=0V
1200
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=1200V,
V
GS
=0V, TJ=25C
100
uA
I
GSS
Gate-body Leakage Current
V
DS
=0V ; V
GS
=-10 to
20V
250
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS,
I
D
=5mA
2
3
4
V
VGSon
Recommended turn-on Voltage
Static
18
V
VGSoff
Recommended turn-off Voltage
-5
V
R
DS(on)
Static Drain-source On Resistance
V
GS
=18V, I
D
=20A
80
100
mΩ
V
GS
=18V, I
D
=20A
TJ=175℃
144
mΩ