WMK7N65D1 WMH7N65D1
WML7N65D1 WMO7N65D1
www.way-on.com
Rev.3.1 2022
D,TAB
S
G
Absolute Maximum Ratings（T
C
=25℃）
Parameter
Symbol
WMK
WML
WMO/WMH
Unit
Drain-source voltage
V
DSS
650
V
Gate-source voltage
V
GS
±30
V
Continuous drain current
I
D
7
A
Pulsed
dra
i
n current
I
DM
28
A
Avalanche energy, single pulse
E
AS
245
mJ
Power dissipation
P
D
150
63
0.5
150
1.2
W
Derate above 25°C
1.2
W/℃
Operating junction temperature
T
j
-55~150
℃
Storage temperature
T
stg
-55~150
℃
Continuous diode forward current
I
S
7
A
Diode pulse current
I
Spulse
28
A
Thermal Characteristic
Thermal resistance,junction-to-case
R
θJC
0.83
1.98
0.83
℃/W
Thermal resistance,junction-to-ambient
R
θJA
30（R
thJ-PCB
）
62.5
62.5
℃/W
Description
650V 7A 1.14Ω N-ch Power MOSFET
WMOS
TM
D1 is Wayon’s 1
st
generation
VDMOS family that is dramatic reduction in
on-resistance and ultra-low gate charge for
applications requiring high power density
and high efficiency. And it is very robust
and RoHS compliant.
Features
V
DS
=700V@T
jmax
Typ.R
DS(on)
≤1.35Ω@V
GS
=10V
100% avalanche tested
Pb-free，Halogen free
Applications
SMPS
Charger
DC-DC
TO-220F
TO-251-L3.5
TO-220
G
D
S
TAB
G
S
D
G
D
S
TAB
TAB
G
D
S
TO-252
2
www.way-on.com
Rev.3.1 2022
WMx7N65D1
Electrical Characteristics of MOSFET
Min.
Typ.
Max.
Drain-source break down voltage
BV
DSS
I
D
=250uA，V
GS
=0V
T
C
=25℃
650
-
-
Gate threshold voltage
V
GS(th)
I
D
=250uA，V
DS
=V
GS
T
J
=25℃
2.0
3.0
4.0
V
Drain-source leakage current
I
DSS
V
DS
=650V，V
GS
=0V
T
J
=25℃
-
-
1
uA
V
DS
=520V，V
GS
=0V
T
J
=125℃
-
-
100
uA
Gate-source leakage current,forward
I
GSSF
V
DS
=0V，V
GS
=30V
T
J
=25℃
-
-
100
nA
Gate-source leakage current,reverse
I
GSSR
V
DS
=0V，V
GS
=-30V
T
J
=25℃
-
-
-100
nA
Drain-source on-state resistance
R
DS(ON)
V
GS
=10V，I
D
=3.5A
T
J
=25℃
-
1.14
1.35
Ω
Transconductance
G
fs
V
DS
=20V
T
J
=25℃
-
10
-
S
Dynamic Characteristics of MOSFET（T
C
=25℃）
Min.
Typ.
Max.
Input capacitance
C
iss
f=1MHz，V
DS
=25V，V
GS
=0V
-
945
-
pF
Output capacitance
C
oss
-
94
-
pF
Reverse transfer capacitance
C
rss
-
9.6
-
pF
Gate to source charge
Q
gs
V
DD
=320V
I
D
=7A
V
GS
= 0 to10V
-
4.5
-
nC
Gate to drain charge
Q
gd
-
7.5
-
nC
Total gate charge
Q
g
-
22
-
nC
Switching Characteristics of MOSFET（T
C
=25℃）
Min.
Typ.
Max.
Turn-on delay time
t
d on
V
DS
=320V，I
D
=7A，
R
G
=25Ω，V
GS
=0 to 10V
-
86
-
ns
Rise time
t
r
-
24
-
ns
Turn-off delay time
t
d off
-
35
-
ns
Fall time
t
f
-
35
-
ns
Characteristics of Body Diode（T
C
=25℃）
Min.
Typ.
Max.
Forward voltage
V
SD
I
SD
=7A，V
GS
=0V
-
-
1.5
Reverse recovery time
t
rr
V
DS
=320V，I
S
=7A，V
GS
=10V
-di/dt=100A/us
-
520
-
Reverse recovery current
I
rr
-
12
-
Recovery charge
Q
rr
-
3.1
-