MOSFET Datasheet
CPC3981Z
800V, 45Ω N-Channel MOSFET
1
© 2023 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: PP.4/25/23
CPC3981Z_R03
D
S
G
D
G
S
4
13
Characteristic Rating Unit
V
(BR)DSX
800 V
T
J
150 °C
R
DS(on)
45
I
DSS
100 mA
Key Attributes
Pinout Diagram (SOT-223-2L)
G: Gate; D: Drain; S: Source
800V breakdown voltage
45 on-resistance
V
GS(off)
: -1.4V to -3.1V
T
J
(max): 150°C
High input impedance
Features & Benefi ts
Normally on switches
Solid state relays
Converters
Telecommunications
Power supplies
Current regulators
Applications
The CPC3981Z is an 800V, N-channel, depletion-mode, Field
Effect Transistor (FET) in a modified SOT-223 package to
provide greater separation of the drain and source leads for
high voltage applications.
The CPC3981Z's robust MOSFET has been used
extensively in Littelfuse Integrated Circuits’ Solid State
Relays in power, industrial, and telecommunications
applications.
The CPC3981Z is available in the SOT-223-2L package.
Description
Part # Description
CPC3981ZTR SOT-223-2L: Tape and Reel (3000/Reel)
Ordering Information
2
MOSFET DatasheetCPC3981Z
© 2023 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: PP.4/25/23
CPC3981Z_R03
Absolute Maximum Ratings
Absolute Maximum Ratings are stress ratings.
Stresses in excess of these ratings can cause
permanent damage to the device. Functional
operation of the device at conditions beyond those
indicated in the operational sections of this data
sheet is not implied. Absolute Maximum Ratings
are at T
A
=
25ºC.
Unless otherwise specified, device characteristics
are at T
A
=
25ºC. Typical values are characteristic
of the device at T
A
=
25ºC and are the result of
engineering evaluations. They are provided for
informational purposes only and are not part of the
manufacturing testing requirements.
Electrical Characteristics
Parameter Symbol Conditions
Value
Unit
Min Typ Max
Drain-to-Source Breakdown Voltage V
(BR)DSX
V
GS
= -5.5V, I
D
= 1µA 800 - - V
Gate-to-Source Off Voltage V
GS(off)
V
DS
= 15V, I
D
= 1µA -1.4 - -3.1 V
Change in V
GS(off)
with Temperature dV
GS(off)
/dT V
DS
= 15V, I
D
= 1µA - - -6.3 mV/ºC
Gate Leakage Current I
GSS
V
GS
= ±15V, V
DS
= 0V - - 100 nA
Drain-to-Source Off-state Leakage Current I
D(off)
V
GS
= -5.5V, V
DS
= 800V - - 1 µA
Saturated Drain-to-Source Current I
DSS
V
GS
= 0V, V
DS
= 15V 100 - - mA
Static Drain-to-Source On-State Resistance* R
DS(on)
V
GS
= 0V, I
D
= 100mA
- 32.5 45
Change in R
DS(on)
with Temperature dR
DS(on)
/dT - - 2.5 %/ºC
Forward Transconductance g
fs
I
D
= 50mA, V
DS
= 10V 100 - - mS
Input Capacitance C
ISS
V
GS
= -3.5V
V
DS
= 25V
f = 1MHz
-
105
-pFOutput Capacitance C
OSS
7. 5
Reverse Transfer Capacitance C
RSS
2.75
Drain-Source Reverse Voltage V
SD
V
GS
= -5.5V, I
S
= 100mA - 0.67 0.95 V
*Measurement taken within 500µs
Parameter Symbol Conditions
Value
Unit
Min Typ Max
Turn-On Delay Time t
d(on)
V
DD
= 25V, I
D
= 50mA, V
GS
= 0V to -10V,
R
GEN
= 50
-
79.2 170
ns
Fall Time t
f
34.9 145
Turn-Off Delay Time t
d(off)
25.3 65
Rise Time t
r
19.7 35
Parameter Symbol Rating Unit
Thermal Resistance
Junction to Ambient
R
th(J-A)
55
ºC/W
Junction to Case
R
th(J-C)
23
Timing Characteristics
Thermal Characteristics
Parameter Rating Unit
Drain-to-Source Voltage 800 V
Gate-to-Source Voltage ±15 V
Pulsed Drain Current 150 mA
Total Package Dissipation
1
2.25 W
Operational Temperature, Ambient -55 to +150 ºC
Junction Temperature, Maximum +150 ºC
Storage Temperature -55 to +150 ºC
1
Mounted on 1"x1" 2 oz. Copper FR4 board.