MMDT5401
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S3208
Rev.1.0,17-July-20
www.21yangjie.com
Dual PNP Small Signal Transistor
Features
● Epoxy meets UL-94 V-0 flammability rating
● Surface mount package ideally Suited for Automatic Insertion
● PNP
Mechanical Data
P
ackage: SOT-363
Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Marking:K4M
Equivalent circuit
COMPLIANT
RoHS
MMDT5401
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S3208
Rev.1.0,17-July-20
www.21yangjie.com
Maximum Ratings (Ta=25 Unless otherwise specified
Item
Symbol Unit Conditions Value
Collector-Base Voltage VCBO V IC=-100μA,IE=0
-160
Collector-Emitter Voltage VCEO V IC=-1mA,IB=0
-150
Emitter-Base Voltage VEBO V IE=-10μA,IC=0
-5
Collector Current -Continuous IC mA -600
Total Device Dissipation PC mW 200
Junction Temperature Tj
150
Storage Temperature TSTG
-55 to +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Item
Symbol Unit Conditions
Min TYP Max
Collector-base breakdown voltage V
CBO
V IC=-100μA,IE=0
-160
Collector-emitter breakdown voltage V
CEO
V IC=-1mA,IB=0
-150
Emitter-base breakdown voltage V
EBO
V IE=-10μA,IC=0
-5
Collector cut-off current I
CBO
nA VCB=-120V,IE=0
-50
Emmiter cut-off current I
EBO
nA VEB=-3V, IC=0
-50
DC current gain
h
FE
1 VCE=-5V,IC=-1mA
50
h
FE
2 VCE=-5V,IC=-10mA 100 300
h
FE
3 VCE=-5V,IC=-50mA 50
Collector-emitter saturation voltage V
CE(sat)
V IC=-10mA,IB=-1mA
-0.2
Collector-emitter saturation voltage V
CE(sat)
V IC=-50mA,IB=-5mA
-0.5
Base-emitter saturation voltage V
BE(sat)
V IC=-10mA,IB=-1mA
-1
Base-emitter saturation voltage V
BE(sat)
V IC=-50mA,IB=-5mA
-1
Output Capacitance Cob pF VCB=-10V, IE=0, f=1.0MHz 6
Transition frequency fT MHz
VCE=-10V,IC=-
10mA,f=100MHz
100
Noise Figure NF dB
VCE=-5V, IC=-0.2mA, f=1kHz,
RS=10Ω
8
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MMDT5401 F2 Approximate 0.009g 3000 30000 120000 7” reel