MMDT3904
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S2843
Rev.1.1,20-Aug-20
www.21yangjie.com
Dual NPN Small Signal Transistor
Features
Epoxy meets UL-94 V-0 flammability rating
Surface mount package ideally Suited for Automatic Insertion
NPN
Mechanical Data
P
ackage: SOT-363
Te
rminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Marking: K6N
Equivalent circuit
COMPLIANT
RoHS
MMDT3904
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S2843
Rev.1.1,20-Aug-20
www.21yangjie.com
Maximum Ratings (Ta=25 Unless otherwise specified
Item
Symbol Unit Conditions Value
Collector-Emitter Voltage V
CEO
V I
C
=1mAdc, I
B
=0 40
Collector-Base Voltage V
CBO
V I
C
=10uAdc, I
E
=0 60
Emitter-Base Voltage V
EBO
V I
E
=10uAdc, I
C
=0 6
Collector Current I
C
mA 200
Collector
Power Dissipation
P
C
mW 200
Junction Temperature T
j
-55 to +150
Storage Temperature T
stg
-55 to +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Item
Symbol Unit Conditions
Min TYP Max
Collector-base breakdown voltage V
CBO
V I
C
=10μA,I
E
=0
60
Collector-emitter breakdown voltage V
CEO
V I
C
=1mA,I
B
=0
40
Emitter-base breakdown voltage V
EBO
V I
E
=10μA,I
C
=0
6
Collector-Base cut-off current I
CBO
nA V
CB
=30V,I
E
=0
50
Collector-Emitter cut-off current I
CEO
nA V
CE
=30V,I
B
=0
50
Emitter-Base Cut-off current I
EBO
nA V
EB
=5V,I
C
=0 50
DC current gain
h
FE(1)
V
CE
=1V,I
C
=10mA
100 300
h
FE(2)
V
CE
=1V,I
C
=50mA 60
Collector-emitter saturation voltage V
CE(sat)
V
I
C
=10mA,I
B
=1mA
0.2
I
C
=50mA,I
B
=5mA
0.3
Baser-emitter saturation voltage V
BE(sat)
V
I
C
=10mA,I
B
=1mA
0.65 0.85
I
C
=50mA,I
B
=5mA
0.95
Collector-base Output Capacitance Cobo pF V
CB
=5.0Vdc, f=1.0MHz, I
E
=0 4
Transition frequency f
T
MHz V
CE
=20V,I
C
=10mA,f=100MHz
300
Noise figure NF dB
V
CE
=5V,Ic=0.1mA,
f=1kHz,Rg=1K
5
Ordering Information (Exa
mple)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MMDT3904 F2 Approximate 0.009g 3000 30000 120000 7” reel