MBR30100PT
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B2023
Rev.1.1,02-Aug-23
Schottky Diodes
Features
● High frequency operation
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-247AB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
MBR30100PT
Device marking code
MBR30100PT
Repetitive Peak Reverse Voltage
V
RRM
V 100
Average Rectified Output Current
@60Hz sine wave, R-load, T
c
=151℃
I
O
A
30
Surge(Non-repetitive)Forward Current
@60H
z
half sine-wave, 1 cycle, T
a
=25℃
I
FSM
A
250
Current Squared Time @1ms≤t≤8.3ms Tj=25℃
I
2
t
A
2
s
259
Storage Temperature
T
stg
℃
-55 ~ +175
Junction Temperature
T
j
℃
-55 ~ +175
■Electrical Characteristics
PARAMETER SYMBOL
UNIT TEST CONDITIONS
Min Typ Max
Peak Forward Voltage
V
FM
V
I
FM
=15.0A
T
j
=25℃
0.5 0.77 0.8
I
FM
=15.0A
Tj=125℃
- 0.66 0.7
DC reverse current
at rated DC blocking voltage per
diode
I
RRM1
mA
V
RM
=V
RRM
T
j
=25℃
- - 0.05
I
RRM2
V
RM
=V
RRM
T
j
=125℃
- - 50
Junction capacitance Cj pF
1MHZ and
A
pplied Reverse
Voltage of 4.0
V.D.C.
200 390 600
Note1:Pulse test:300uS pulse widh,1% duty cycle
Note2:Pulse test:pulse widh 40mS
COMPLIANT
RoHS
MBR30100PT
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B2023
Rev.1.1,02-Aug-23
■
Thermal Characteristics （T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
MBR30100PT
Thermal
Resistance
Between junction and ambient
R
θJ-A
℃/W
50.0
Between junction and case
R
θJ-C ℃/W
1.0
■
Characteristics (Typical)
Instantaneous Forward Current (A)
FIG3: Forward Voltage
Instantaneous Forward Voltage (V)
0.2 0.3
0.4
0.5
0.6
0.7
0.1
0.2
0.5
1.0
10
20
40
5.0
0.8
0.9 1.0
0.1
0
1.1
1.2
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
0.001
0.01
0
20
40 60 80 100
0.1
1.0
10
100
FIG.4: Instantaneous Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
Case Temperature（℃）
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
0
50
200
150
5.0
10.0
15.0
20.0
25.0
30.0
35.0
100
FIG2:Surge Forward Current Capability
Number of Cycles
Peak Forward Surge Current (A)
12 5 1020 50 100
100
150
200
250
8.3ms Single
Half Sine-Wave
JEDEC Method
300
50
0