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GESDN3V0C2
Standard Capacitance TVS Array
Product Summary
Feature
Small package for use in portable electronics
Low reverse clamping voltage
Low leakage current
Fast response time <1ns
Meets MSL 1 Requirements
IEC 61000-4-2 Level 4 ESD protection
Application
Data lines
Industrial Controls
Cellular handsets AND accessories
Portable instrumentation
Peripherals
Notebook Computers
Set-Top Box
Projection TV
The GESDN3V0C2 is an uni-directional TVS diode, utilizing leading monolithic
silicon technology to provide fast response time and low ESD clamping voltage,
making this device an ideal solution for protecting voltage sensitive data and power
line. The dual-junction common-anode design allows the user to protect one bidirectional
data line or two unidirectional lines.
SOT-23
Schematic diagram
GESDN3V0C2
http://www.sh-greenpower.com Shanghai GreenPower Electronic Co.Ltd. 2
Absolute Maximum Ratings (T
a
=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
IEC 61000-4-2 ESD Voltage Air Model
V
ESD
1)
±15
kV
IEC 61000-4-2 ESD Voltage Contact Model
±8
JESD22-A114-B ESD Voltage Per Human Body Model
±8
ESD Voltage Machine Model
±0.4
Peak Pulse Power
P
PP
2)
80
W
Peak Pulse Current
I
PP
2)
6
A
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~ +150
℃
1) Device stressed with ten non-repetitive ESD pulses.
2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard JESD22-A114-B Standard
Contact Discharge
Level
Test Voltage kV
Level
Test Voltage kV
1
2
1
2
2
4
2
4
3
6
3
8
4
8
4
15
Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5
ESD Class
Human Body Discharge V
0
0~249
1A
1B
1C
250~499
500~999
1000~1999
2
2000~3999
3A
3B
4000~7999
8000~15999
t
60ns
30ns
t
r
= 0.7~1ns
10
90
100
Current (%)
Time (ns)
0 5 10 15 20 25 30
0
100
90
50
10
T
2
T
1
Front time: T
1
= 1.25 T = 8s
Time to half-value: T
2
= 20s
Peak pulse current (%)
Time (s)
T