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GESDQ5V0C2
Standard Capacitance TVS Array
Product Summary
Feature
⚫ Small package for use in portable electronics
⚫ Low reverse clamping voltage
⚫ Low leakage current
⚫ Fast response time <1ns
⚫ Meets MSL 1 Requirements
⚫ IEC 61000-4-2 Level 4 ESD protection
Application
⚫ Data lines
⚫ Industrial Controls
⚫ Cellular handsets AND accessories
⚫ Portable instrumentation
⚫ Peripherals
⚫ Notebook Computers
⚫ Set-Top Box
⚫ Projection TV
Marking
The GESDQ5V0C2 is an uni-directional TVS diode, utilizing leading
monolithic silicon technology to provide fast response time and low ESD
clamping voltage, making this device an ideal solution for protecting
voltage sensitive data and power line. The dual-junction common-anode
design allows the user to protect one bidirectional data line or two
unidirectional lines.
SOT-23
Schematic diagram
05C
GESDQ5V0C2
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Absolute Maximum Ratings (T
a
=25℃ unless otherwise noted)
Parameter
Symbol
Unit
IEC 61000-4-2 ESD Voltage Air Model
V
ESD
1)
kV
IEC 61000-4-2 ESD Voltage Contact Model
JESD22-A114-B ESD Voltage Per Human Body Model
ESD Voltage Machine Model
Peak Pulse Power
P
PP
2)
W
Peak Pulse Current
I
PP
2)
A
Lead Solder Temperature − Maximum (10 Second Duration)
TL
℃
Junction Temperature
Tj
℃
Storage Temperature
Tstg
℃
1) Device stressed with ten non-repetitive ESD pulses.
2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard JESD22-A114-B Standard
Contact Discharge
Air Discharge
Level
Test Voltage kV
Level
Test Voltage kV
1
2
1
2
2
4
2
4
3
6
3
8
4
8
4
15
Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5
ESD Class
Human Body Discharge V
0
0~249
1A
1B
1C
250~499
500~999
1000~1999
2
2000~3999
3A
3B
4000~7999
8000~15999
t
60ns
30ns
t
r
= 0.7~1ns
10
90
100
Current (%)
Time (ns)
0 5 10 15 20 25 30
0
100
90
50
10
T
2
T
1
Front time: T
1
= 1.25 T = 8s
Time to half-value: T
2
= 20s
Peak pulse current (%)
Time (s)
T