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GESDS12VP1P
Uni-direction Transient Voltage Suppressors
Product Summary
Feature
⚫ Low reverse stand−off voltage: 12V
⚫ Low reverse clamping voltage
⚫ Low leakage current
⚫ Fast response time
⚫ JESD22-A114-B ESD Rating of class 3B per human body model
⚫ IEC 61000-4-2 Level 4 ESD protection
Application
⚫ Computers and peripherals
⚫ Portable electronics
⚫ Power lines
⚫ Audio and video equipment
⚫ Cellular handsets and accessories
⚫ Other electronic equipment communication systems
Marking:
Front Side
T12=Device Code
DFN2*2-3L
Schematic diagram
The GESDS12VP1P is an uni-directional TVS diode, utilizing leading monolithic
silicon technology to provide fast response time and low ESD clamping voltage,
making this device an ideal solution for protecting voltage sensitive data and power
line.
T12
PIN1, 2
PIN3
GESDS12VP1P
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Absolute Maximum Ratings (T
a
=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
IEC 61000-4-2 ESD Voltage Air Model
V
ESD
1)
±30
kV
IEC 61000-4-2 ESD Voltage Contact Model
±30
JESD22-A114-B ESD Voltage Per Human Body Model
±16
ESD Voltage Machine Model
±0.4
Peak Pulse Power
P
PP
2)
4500
W
Peak Pulse Current
I
PP
2)
180
A
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~ +150
℃
1) Device stressed with ten non-repetitive ESD pulses.
2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard JESD22-A114-B Standard
Contact Discharge
Air Discharge
Level
Test Voltage kV
Level
Test Voltage kV
1
2
1
2
2
4
2
4
3
6
3
8
4
8
4
15
Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5
ESD Class
Human Body Discharge V
0
0~249
1A
1B
1C
250~499
500~999
1000~1999
2
2000~3999
3A
3B
4000~7999
8000~15999
t
60ns
30ns
t
r
= 0.7~1ns
10
90
100
Current (%)
Time (ns)
0 5 10 15 20 25 30
0
100
90
50
10
T
2
T
1
Front time: T
1
= 1.25 T = 8s
Time to half-value: T
2
= 20s
Peak pulse current (%)
Time (s)
T